Jiangsu Profile
Product List
706. 2A 800V Fast Recovery Rectifier Diode By299 
[Sep 16, 2025]
[Sep 16, 2025] 2A,1000V-SILICON RECTIFIER-BY299 Datasheet PRODUCT SERIES Reliability Test List HIGH RELIABILITY-TEST LIST Number Experiment Items Experiment Method And ...
707. Hot Sale 80A 400V Fast Recovery Diode Mur80fu40DCT to-3p [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
708. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
709. 54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH130P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -54 A (T=100ºC) -38 A Drain ...
710. Diesel Generator Accessory Rsk6001 Rectifier Diode [Sep 29, 2025]
[Sep 29, 2025] Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...
Company: Jiangsu Lingyu Generator Co., Ltd.
711. Diesel Generator Diode Module High Quality [Sep 29, 2025]
[Sep 29, 2025] Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...
Company: Jiangsu Lingyu Generator Co., Ltd.
712. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f [Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
713. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Sep 02, 2025]
[Sep 02, 2025] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
714. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
715. 60A 400V Fast Recovery Diode Mur6040DCT to-3p [Sep 01, 2025]
[Sep 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
716. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
717. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
718. Automatic Flip Chip Eutectic Die Bonding Machine for LED/IC [Aug 22, 2025]
[Aug 22, 2025] HMLA-S platform is an off-line automatic micro assembly system developed by the company, which can be equipped with nozzle heating module, material tray/wafer placing plate, ultrasonic module, laser heating module, UV ...
719. Thyristor Silicon Controlled Rectifier Series 2p4m to-126 [Jun 23, 2025]
[Jun 23, 2025] Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
720. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
