Jiangsu Profile
Product List
826. 112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c 
[Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...
827. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
828. 180A 60V N-Channel Enhancement Mode Power Mosfet 180n06 to-247 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 130 A Drain ...
829. 7A 800V N-Channel Enhancement Mode Power Mosfet 7n80 to-220 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
830. Dh240n06ld to-252 30A 60V N-Channel Enhancement Mode Power Mosfet [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
831. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100 to-220 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
832. 10A 650V N-Channel Enhancement Mode Power Mosfet 10n65 to-220 [Jun 25, 2025]
[Jun 25, 2025] Features Low switching loss Low ON Resistance (Rdson≤5.5mΩ) Low Gate Charge (Typ: 48nC) Low Reverse Transfer Capacitances (Typ: 210pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
833. 20A 500V N-Channel Enhancement Mode Power Mosfet 20n50b to-247 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
834. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh60n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH60N06/DHI60N06/DHE60N06/ DHB60N06/DHD60N06 DHF60N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
835. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
836. 500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
837. 30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c [Jun 25, 2025]
[Jun 25, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
838. 8A 700V N-Channel Enhancement Mode Power Mosfet Dhdsj8n70 to-252b [Jun 25, 2025]
[Jun 25, 2025] Features Fast switching Low on resistance(Rdson≤0.6Ω) Low gate charge(Typ: 16nC) Low reverse transfer capacitances(Typ: 3.1pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
839. 105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
840. 160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
