Jiangsu Profile
Product List
871. 740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet 
[Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
872. 23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
873. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30 to-220c [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30/DH100P30I/DH100P30E/DH100P30B/DH100P30D DH100P30F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
874. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
875. 30A 60V P-Channel Enhancement Mode Power Mosfet Dh300p06D to-252 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH300P06/DH300P06I/DH300P06E/DH300P06B/DH300P06D DH300P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
876. Insulated Gate Bipolar Transistor IGBT G40n60d to-247 **%off [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
877. 20A 150V Schottky Barrier Diode Mbr20150CT to-220 [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
878. 30A 150V Schottky Barrier Diode Mbr30150CT to-220 [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
879. 10A 150V Low Schottky Barrier Diode Mbr10r150CT to-252 [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
880. Three-Terminal 1.0A Positive Voltage Regulator IC 78m12A to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
881. 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n20 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
882. 145A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06p Dfn5*6-8L [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...
883. 10A 100V Schottkybarrierdiode Mbr10100CT to-220m [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
884. 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
885. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
