Jiangsu Profile
Product List
721. 650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L 
[Jun 23, 2025]
[Jun 23, 2025] 6A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
722. Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet [Sep 29, 2025]
[Sep 29, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
723. 150A 100V N-Channel Enhancement Mode Power Mosfet Dh150n10 to-220 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
724. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
725. D92-02A to-3pn 10A 200V Fast Recovery Diode [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...
726. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
727. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
728. Factory Price Triac Kp500A Kp1000A Kp2500A Capsule Type SCR Thyristor for Industrial Applications [Jul 24, 2025]
[Jul 24, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
729. 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 [Jun 23, 2025]
[Jun 23, 2025] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
730. Diesel Generator Set Diode Module of Rsk Series Models Rsk1001, Rsk2001, Rsk5001, Rsk6001 [Sep 29, 2025]
[Sep 29, 2025] Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...
Company: Jiangsu Lingyu Generator Co., Ltd.
731. Generator Accessories Rectifier Diode Forward and Reverse Diesel Generator Parts 500kVA1000kVA ... [Sep 29, 2025]
[Sep 29, 2025] Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...
Company: Jiangsu Lingyu Generator Co., Ltd.
732. 70A 200V Fast Recovery Diode Mur7020DCT to-3p [Sep 02, 2025]
[Sep 02, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
733. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
734. 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L [Jun 23, 2025]
[Jun 23, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
735. Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
