Jiangsu Profile
Product List
586. 7A 600V N-Channel Enhancement Mode Power Mosfet F7n60 to-220f 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
587. 160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
588. 0.8A 600V N-Channel Enhancement Mode Power Mosfet D1n60 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
589. 10A 400V Fast Recovery Diode Mur1040CT to-220 [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
590. 80A 80V N-Channel Enhancement Mode Power Mosfet Dhe80n08 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
591. 100A 85V N-Channel Enhancement Mode Power Mosfet 85n08 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 85N08/I85N08/E85N08 F85N08 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
592. 140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...
593. 85A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06 to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
594. 155A 40V N-Channel Enhancement Mode Power Mosfet DHD035n04 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
595. 30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
596. 12A 600V N-Channel Enhancement Mode Power Mosfet F12n60 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
597. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
598. 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
599. 50A 200V N-Channel Enhancement Mode Power Mosfet Dhf50n20 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
600. 500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
