Jiangsu Profile
Product List
511. Three-Terminal Voltage Regulator IC L7809CV to-220 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
512. 40A 100V Schottky Barrier Diode Mbr40100CT to-220 [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
513. 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
514. 2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
515. 8A 400V Fast Recovery Diode Mur840 to-220-2L [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
516. 13A 500V N-Channel Enhancement Mode Power Mosfet F13n50 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 13N50/I13N50/E13N50 F13N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
517. 7A 650V N-Channel Super Junction Power Mosfet Dhdsj7n65 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
518. 68A 1200V N-Channel Sic Power Mosfet Dccf040m120A2 [Jun 24, 2024]
[Jun 24, 2024] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
519. 80A 60V N-Channel Enhancement Mode Power Mosfet E80n06 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
520. 10A 200V Schottky Barrier Diode Mbr10200CT to-220 [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
521. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100b to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
522. 160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
523. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
524. 10A 700V Fast Recovery Diode Mur1070CT to-220 [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
525. Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
