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60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247
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421.

60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247 Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode Mbr10150CT to-252b
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422.

10A 150V Schottky Barrier Diode Mbr10150CT to-252b Open Details in New Window [May 17, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode Mur1060 to-220-2L
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423.

10A 600V Fast Recovery Diode Mur1060 to-220-2L Open Details in New Window [May 17, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet
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424.

D120n04 to-252 120A 40V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [May 17, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 0.8 2 V EAS - - 960 mJ Ptot - - 120 W Rdson 3.3 - 4.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode Mur1040 to-220-2L
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425.

10A 400V Fast Recovery Diode Mur1040 to-220-2L Open Details in New Window [May 17, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f
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426.

600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

D92-02A to-3pn 10A 200V Fast Recovery Diode
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427.

D92-02A to-3pn 10A 200V Fast Recovery Diode Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT
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428.

50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Schottky Barrier Rectifier Diode 8A 40V Sk84
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429.

Schottky Barrier Rectifier Diode 8A 40V Sk84 Open Details in New Window [Jun 04, 2025]

8A,40V-SCHOTTKY DIODE-SK84 Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

35A 400V Block Diode Bk354 and Soza Cell Diode
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430.

35A 400V Block Diode Bk354 and Soza Cell Diode Open Details in New Window [May 15, 2025]

35A 400V PRESS FIT DIODE -ZQ354 the dia can be 10.1mm, 10.5mm, 10.8mm, 12.8mm. Amper could be 25A, 35A, 50A, Voltage could be 400V, 19-42V. Datasheet Products list AUTOMOTIVE ...

Company: Changzhou Shunye Electronics Co., Ltd.

10A 700V Fast Recovery Diode Mur1070 to-220-2L
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431.

10A 700V Fast Recovery Diode Mur1070 to-220-2L Open Details in New Window [May 17, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 200V Fast Recovery Diode Mur4020DCT to-3p
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432.

40A 200V Fast Recovery Diode Mur4020DCT to-3p Open Details in New Window [May 17, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b
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433.

105A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15 to-220c & Dhs110n15D to-252b Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c
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434.

30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c Open Details in New Window [May 17, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off
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435.

Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off Open Details in New Window [May 17, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd