Jiangsu Profile
Product List
481. 740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet 
[Feb 22, 2025]
[Feb 22, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
482. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220 [Feb 22, 2025]
[Feb 22, 2025] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
483. 18A 1200V N-Channel Sic Power Mosfet S18n120d [Jan 22, 2025]
[Jan 22, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
484. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn [Jan 22, 2025]
[Jan 22, 2025] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
485. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Jun 24, 2024]
[Jun 24, 2024] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
486. 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 [Jun 24, 2024]
[Jun 24, 2024] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
487. Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
488. Triac BTA16-600b to-220mf [Feb 22, 2025]
[Feb 22, 2025] Description 16A series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. (TO-220AIns) series provide insulation voltage rated at ...
489. Insulated Gate Bipolar Transistor IGBT G60t65D to-3p [Jan 20, 2025]
[Jan 20, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
490. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Jan 20, 2025]
[Jan 20, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
491. 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L [Jun 24, 2024]
[Jun 24, 2024] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
492. Bt152 20A 600V Series 20A Scrs Transistor Triac Support Thyistor Customization [Jun 28, 2021]
[Jun 28, 2021] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
493. 30A 45V Schottky Barrier Diode Mbr3045CT to-263 [Jan 22, 2025]
[Jan 22, 2025] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
494. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Jan 20, 2025]
[Jan 20, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
495. Dh066n06b, to-251, 85A 60V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
