Jiangsu Profile
Product List
436. 5A 500V N-Channel Enhancement Mode Power Mosfet D830 to-252 
[May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 830/D830 F830 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 5 A Total ...
437. Dhs035n88 to-220 200A 85V N-Channel Enhancement Mode Power Mosfet [May 17, 2025]
[May 17, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
438. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 25N10/I25N10/E25N10/B25N10/D25N10 F25N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
439. 23A 500V N-Channel Enhancement Mode Power Mosfet 23n50d to-3pn [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT 23N50D Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
440. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [May 17, 2025]
[May 17, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
441. 40A 600V Fast Recovery Diode Mur40fu60DCT to-3pn [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward ...
442. 80A 300V Fast Recovery Diode Mur80fu30CT to-247 [Apr 08, 2025]
[Apr 08, 2025] Features Low power loss high efficiency Low forward voltage high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
443. 2A 600V N-Channe0l Enhancement Mode Power Mosfet F2n60 to-220f [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/ E2N60/B2N60/D2N6 F2N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
444. 80A 300V Fast Recovery Diode Mur80fu30DCT to-3p [Apr 08, 2025]
[Apr 08, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
445. F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
446. 60A 200V Fast Recovery Diode Mur6020DCT to-3p [Apr 08, 2025]
[Apr 08, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
447. 8A 1200V Fast Recovery Diode Mur8120 to-220-2L [Apr 08, 2025]
[Apr 08, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
448. 12A 100V N-Channel Enhancement Mode Power Mosfet DHD12n10 to-252 [Apr 01, 2025]
[Apr 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB12N10/DHD12N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8.5 A Drain ...
449. 20A 200V Schottky Barrier Diode Mbr20200CT to-220 [Apr 08, 2025]
[Apr 08, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
450. Dhs020n85 to-220 180A 85V N-Channel Enhancement Mode Power Mosfet [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N85/DHS020N85E DHS020N85D/DHS020N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
