Jiangsu Profile

Product List
691. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10 to-220c
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
692. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc50f65m2 to-247
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
693. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06f to-220f
[Jun 24, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 30 W Rdson 14 - 720 mΩ ...
694. 20A 100V Schottkybarrierdiode Mbra20100CT to-220m
[Jun 24, 2024]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical ...
695. 7A 650V N-Channel Enhancement Mode Power Mosfet F7n65 to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
696. 4A 700V N-Channel Enhancement Mode Power Mosfet D4n70 to-252b
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 4N70/D4N70/B4N70/I4N70/E4N70 F4N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
697. 10A 150V Schottky Barrier Diode Mbrf10150CT to-220f
[Jun 24, 2024]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
698. 60A 60V Schottkybarrierdiode Mbr6060nct to-3pn
[Jun 24, 2024]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
699. SOD-123 Case Fast Recovery Rectifier Diode RS1510FL/RS1510
[May 29, 2025]

1.5A,1000V-FAST RECOVERY RECTIFIER DIODE-RS1510FL Datasheet PRODUCT SERIES Reliability Test List HIGH RELIABILITY-TEST LIST Number Experiment Items Experiment Method ...
700. Bilateral Voltage Triggered Switch Breakover Voltage 220V, Sidiac Diode-K2200g
[Mar 20, 2025]

Bilateral Voltage Triggered Switch Breakover Voltage 95-280V, SIDIAC DIODE-K1050G thru K2501G 1.Datasheet: 2.Products list: DIACS TYPE Breakover Voltage Maximum Maximum Peak ...
701. Bilateral Voltage Triggered Switch Breakover Voltage Sidiac Diode-K2400g and K2200g
[Mar 20, 2025]

Bilateral Voltage Triggered Switch Breakover Voltage 95-280V, SIDIAC DIODE-K1050G thru K2501G 1.Datasheet: 2.Products list: DIACS TYPE Breakover Voltage Maximum Maximum Peak ...
702. Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220
[Feb 27, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 5 A *Collector Current ...
703. 80A 200V Fast Recovery Diode Mur80fu20nct to-3pn
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
704. 15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
705. 75A 1200V Fast Recovery Diode Mur75120 to-247-2L
[Jun 24, 2024]

SYMBOL RATING VBR (V) Min 1200 typ 1300 IR(uA)25ºC max 5.0 VF (V) 25ºC typ. 2.5 max 3.0 Trr (ns) typ. 70 max 100 IF(A) Single chip package 75 IF(A) Dual chip package - Features Low ...
