Jiangsu Profile
Product List
2206. Mosfet Ao3438 Substitute 20V 6A N-Channel Mosfet with Sot-23 Package 
[May 27, 2022]
[May 27, 2022] MOSFET AO3438 Substitute 20V 6A N-channel Mosfet with SOT-23 Package General Description The 2300F uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and improved ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2207. Fdn337n Substitute Mosfet Transistor 3400L 30V 5.6A N Channel Sot-23 [May 24, 2022]
[May 24, 2022] FDN337N Substitute Mosfet Transistor 3400L 30V 5.6A N CHANNEL SOT-23 General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2208. Electronic Components 3400 40V 50A Sot-23 Power Transistor China Supplier [May 24, 2022]
[May 24, 2022] Electronic Components 3400 40V 50A SOT-23 Power Transistor China Supplier General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2209. G05np06s2 N and P Channel 60V Sop-8 Mosfet [May 24, 2022]
[May 24, 2022] G05NP06S2 N and P Channel 60V SOP-8 MOSFET General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2210. Electronic Component Mosfet Transistor G65p06D5 60V Dfn Package Mosfet [May 24, 2022]
[May 24, 2022] Electronic Component Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2211. Goford G16n03s 30V 12A N Channel Mosfet with Sop-8 Package [May 21, 2022]
[May 21, 2022] GOFORD G16N03S 30V 12A N Channel MOSFET with SOP-8 Package General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2212. Factory Directly Mosfet Transistor G65p06D5 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Factory Directly Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2213. Discrete Component G16p03s P Channel 30V 16A Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2214. IC Component G08n02L 20V 8A 10mohm Sot-23-3L N Channel Mosfet [May 21, 2022]
[May 21, 2022] IC Component G08N02l 20V 8A 10mohm SOT-23-3L N Channel MOSFET General Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2215. G01n20L Mosfet 200V 2A Sot-23-3L Package Transistor China Manufacturer [May 21, 2022]
[May 21, 2022] G01N20L MOSFET 200V 2A SOT-23-3L Package Transistor China Manufacturer General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2216. ISO9001 Certificate Mosfet Transistor of 60V Dfn Package [May 21, 2022]
[May 21, 2022] ISO9001 Certificate MOSFET Transistor of 60V DFN Package General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2217. Free Sample G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge [May 21, 2022]
[May 21, 2022] Free Sample G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2218. Equivalent Transistor Fqd10n20L Substitute Mosfet of 200V 9A Dpak [May 21, 2022]
[May 21, 2022] Equivalent Transistor FQD10N20L Substitute MOSFET of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2219. Power Mosfet Transistor Gt025n06D5 95A 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Power Mosfet Transistor GT025N06D5 95A 60V DFN Package Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2220. Mosfet G20n06j 60V to-251 Package Mosfet with ISO9001 Certificate [Mar 18, 2022]
[Mar 18, 2022] MOSFET G20N06J 60V TO-251 Package MOSFET with ISO9001 Certificate General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
