Jiangsu Profile
Product List
2161. Switching Diodes (1N4448) 
[Aug 07, 2014]
[Aug 07, 2014] 1N4448 switching diodes VR: 75V, 200mA Package: DO-35
Company: Wuxi Xuyang Electronics Co., Ltd.
2162. Diode (LL4148) [Aug 21, 2024]
[Aug 21, 2024] LL4148 diode, Minimelf package, Tape in reel Packing: 2.5Kpcs/reel, 25Kpcs/box, 100Kpcs/carton. Please feel free to contact us if you are interested in any of our product. You are welcome at any time, and it will ...
Company: Wuxi Xuyang Electronics Co., Ltd.
2163. Switching Diodes (1N914) [Aug 07, 2014]
[Aug 07, 2014] 1N914 switching diodes VR: 75V Package: DO-35
Company: Wuxi Xuyang Electronics Co., Ltd.
2164. Irf640 Equivalent Transistor 18n20 200V 18A to-220 Mosfet for LED Lighting [Mar 19, 2021]
[Mar 19, 2021] Product Description IRF640 equivalent transistor 18N20 200V 18A TO-220 mosfet for led lighting Part Number 18N20 VDSS 200V ID 18A RDS 136 mΩ @ vgs=10V Vth 1~3V Package TO-220 Ciss 836 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2165. Factory Directly G12p03D3 Dfn3X3-8L -30V -12A Mosfet with Free Sample [Nov 14, 2023]
[Nov 14, 2023] Product Description Factory Directly G12p03D3 Dfn3X3-8L -30V -12A Mosfet with Free Sample Part Number G12P03D3 VDSS -30V ID -12A RDSON 24.5mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2166. Vacuum Switching Tubes (TJ-1.14/80A) [Aug 21, 2024]
[Aug 21, 2024] The vacuum Interrupter adopts "one shut technology", ceramic shell, CuWC as the contact material; Interrupter is characterized by high insulation, low stop-flow, strong blowout ability, long life, small size etc, and ...
2167. Vacuum Switching Tubes (TJ-1.14/80B) [Aug 21, 2024]
[Aug 21, 2024] The vacuum Interrupter adopts "one shut technology", ceramic shell, CuWC as the contact material; Interrupter is characterized by high insulation, low stop-flow, strong blowout ability, long life, small size etc, and ...
2168. IGBT Power Transistor G12p10K -100V -12A Mosfet for Power Supply [Aug 19, 2022]
[Aug 19, 2022] Product Description IGBT power transistor G12P10K -100V -12A MOSFET for power supply Part Number G12P10K VDSS -100V ID -12A RDS 170mΩ @ vgs=10V Vth -1.9V Package TO-252 Ciss 760 pF Crss 170 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2169. SMD Transistor G16p03D3 Dfn3X3-8L -30V -16A P Channel Field Effect Mosfet [Oct 08, 2021]
[Oct 08, 2021] Product Description smd transistor G16P03D3 DFN3X3-8L -30V -16A P channel Field Effect mosfet Part Number G16P03D3 VDSS -30V ID -16A RDS 11.5mΩ @ vgs=4.5V Vth -1.5V Package DFN3*3 Ciss 1995 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2170. Factory Directly P Channel 30V 7A Dfn Package Mosfet [Nov 14, 2023]
[Nov 14, 2023] Factory Directly P channel 30V 7A DFN Package MOSFET General Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2171. G05np10s Mosfet 100V 5A Sop-8 N+P Mosfet [Nov 14, 2023]
[Nov 14, 2023] G05NP10S MOSFET 100V 5A SOP-8 N+P MOSFET General Description The G05NP10S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2172. Ao6294 Alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application [Nov 13, 2023]
[Nov 13, 2023] AO6294 alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2173. Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23 [Nov 14, 2023]
[Nov 14, 2023] DMG3402L-7 Equivalent Transistor MOSFET G3404 of 30V 5.8A SOT-23 General Description The G3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2174. Fdmc4435bz Replacement Mosfet -30V P Channel Dfn Package for Mobile Fast Charge [Nov 13, 2023]
[Nov 13, 2023] FDMC4435BZ Replacement MOSFET -30V P Channel DFN Package for Mobile Fast Charge General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2175. Enhancement Mode Field Effect Transistor 20n06 60V 25A Mosfet Switching Applications [Aug 19, 2022]
[Aug 19, 2022] Product Description Enhancement Mode Field Effect Transistor 20N06 60V 25A mosfet switching applications Part Number 20N06 VDSS 60V ID 25A RDS 18mΩ @ vgs=10V Vth 1~3V Package TO-252 Ciss 1890 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
