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2116. Factory Directly 20V Dfn2*2-6L Package Mosfet as Alternative of Fdma410nz 
[Jun 10, 2022]
[Jun 10, 2022] Factory Directly 20V Dfn2*2-6L Package MOSFET as Alternative of Fdma410nz General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2117. Ao3442 Equivalent Transistor Mosfet 1002L 100V 2A Sot-23-3 [Jun 10, 2022]
[Jun 10, 2022] AO3442 Equivalent Transistor MOSFET 1002L 100V 2A SOT-23-3 General Description The 1002L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2118. RoHS Approved 40V 7A Sop-8 P Channel Mosfet [Jun 10, 2022]
[Jun 10, 2022] ROHS Approved 40V 7A Sop-8 P Channel Mosfet General Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2119. New Original 60V 14A N Channel Power Mosfet with RoHS Certificate [Jun 10, 2022]
[Jun 10, 2022] New Original 60V 14A N Channel Power Mosfet with RoHS Certificate General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2120. Mosfet Ao4455 Equivalent Transistor G16p03s P Mosfet -30V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Mosfet AO4455 Equivalent Transistor G16P03S P Mosfet -30V SOP-8 General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2121. Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter [Jun 10, 2022]
[Jun 10, 2022] SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2122. Discrete Component Irf7413z Equivalent Transistor G16n03s N Channel 30V 16A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Discrete Component IRF7413Z Equivalent Transistor G16N03S N Channel 30V 16A Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2123. Mosfet Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes [Jun 10, 2022]
[Jun 10, 2022] MOSFET Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2124. Dual N Channel Mosfet 60V 4.5A Sop-8 Package with SGS Certificate [Jun 10, 2022]
[Jun 10, 2022] Dual N Channel MOSFET 60V 4.5A SOP-8 Package with SGS Certificate General Description The G05N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2125. Si4931dy Substitute G11s Mosfet Transistor P Channel 12V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Si4931DY Substitute G11S Mosfet Transistor P Channel 12V SOP-8 General Description The G11S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2126. RoHS Compliant N Channel 100V 75A to-252 Package Mosfet [Jun 10, 2022]
[Jun 10, 2022] RoHS Compliant N Channel 100V 75A TO-252 Package Mosfet General Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2127. LED Power Supply Application 60n04 40V 60A To252 N Mosfet [Jun 10, 2022]
[Jun 10, 2022] LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2128. Power Mosfet Transistor 200V 18A Dpak Mosfet for LED Driver [Jun 10, 2022]
[Jun 10, 2022] Power MOSFET Transistor 200V 18A DPAK MOSFET for Led Driver General Description The 18N20 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2129. Electronic Parts Semiconductor Equivalent Transistor of 100V Dpak Mosfet [Jun 10, 2022]
[Jun 10, 2022] Electronic Parts Semiconductor Equivalent Transistor of 100V DPAK Mosfet General Description The G06N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2130. Electronic Component Manufacturer 100V Sgt Mosfet for Solar Inverter [Jun 10, 2022]
[Jun 10, 2022] Electronic Component Manufacturer 100V SGT MOSFET for Solar Inverter General Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
