Jiangsu Profile
Product List
2296. China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger 
[Jun 10, 2022]
[Jun 10, 2022] China MOSFET Manufacturer 40V 13A P MOSFET for Mobile Fast Charger General Description The G13P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2297. Factory Directly Dual N-Channel Trench Mosfet of Sop-8 100V 8A [Jun 10, 2022]
[Jun 10, 2022] Factory Directly Dual N-Channel Trench MOSFET of SOP-8 100V 8A General Description The G1008B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2298. Dual N Channel Mosfet G06np06s2 60V 6A Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Dual N Channel Mosfet G06NP06S2 60V 6A SOP-8 General Description The G06NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2299. Factory Directly Transistor 30V 18A Sop-8 Package Mosfet for Pd [Jun 10, 2022]
[Jun 10, 2022] Factory Directly Transistor 30V 18A SOP-8 Package Mosfet for PD General Description The G18P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2300. CSD17510q5a Equivalent Transistor 30V N Channel Dfn5X6 Package Mosfet [Jun 10, 2022]
[Jun 10, 2022] CSD17510q5a Equivalent Transistor 30V N Channel Dfn5X6 Package Mosfet General Description The GT130N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2301. Stock Mosfet Supplier 60V 40A Dfn5X6 N Mosfet with SGS Certificate [Jun 10, 2022]
[Jun 10, 2022] Stock Mosfet Supplier 60V 40A DFN5X6 N MOSFET with SGS Certificate General Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2302. SMD Transistor -40V -5.3A P-Channel Sot-23-3 Mosfet [Jun 10, 2022]
[Jun 10, 2022] SMD Transistor -40V -5.3A P-Channel SOT-23-3 mosfet General Description The 5P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2303. ISO9001 Certificate Factory 200V 5A Dpak 5n20A Mosfet for LED Dimming [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Certificate Factory 200V 5A DPAK 5N20A MOSFET for LED Dimming General Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2304. Factory Directly 20V Dfn2*2-6L Package Mosfet as Alternative of Fdma410nz [Jun 10, 2022]
[Jun 10, 2022] Factory Directly 20V Dfn2*2-6L Package MOSFET as Alternative of Fdma410nz General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2305. Ao3442 Equivalent Transistor Mosfet 1002L 100V 2A Sot-23-3 [Jun 10, 2022]
[Jun 10, 2022] AO3442 Equivalent Transistor MOSFET 1002L 100V 2A SOT-23-3 General Description The 1002L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2306. RoHS Approved 40V 7A Sop-8 P Channel Mosfet [Jun 10, 2022]
[Jun 10, 2022] ROHS Approved 40V 7A Sop-8 P Channel Mosfet General Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2307. New Original 60V 14A N Channel Power Mosfet with RoHS Certificate [Jun 10, 2022]
[Jun 10, 2022] New Original 60V 14A N Channel Power Mosfet with RoHS Certificate General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2308. Mosfet Ao4455 Equivalent Transistor G16p03s P Mosfet -30V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Mosfet AO4455 Equivalent Transistor G16P03S P Mosfet -30V SOP-8 General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2309. Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter [Jun 10, 2022]
[Jun 10, 2022] SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2310. Discrete Component Irf7413z Equivalent Transistor G16n03s N Channel 30V 16A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Discrete Component IRF7413Z Equivalent Transistor G16N03S N Channel 30V 16A Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
