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20A 150V Schottky Barrier Diode Mbr20150CT to-220
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106.

20A 150V Schottky Barrier Diode Mbr20150CT to-220 Open Details in New Window [Nov 28, 2025]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247
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107.

75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 Open Details in New Window [Oct 28, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220
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108.

160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode Mur6040DCT to-3p
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109.

60A 400V Fast Recovery Diode Mur6040DCT to-3p Open Details in New Window [Sep 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet
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110.

Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252
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111.

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252
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112.

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet
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113.

DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 30, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262
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114.

10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 Open Details in New Window [Jun 30, 2025]

PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Schottky Barrier Diode Mbr2045CT to-220
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115.

20A 45V Schottky Barrier Diode Mbr2045CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottky Barrier Diode Mbr10200CT to-220
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116.

10A 200V Schottky Barrier Diode Mbr10200CT to-220 Open Details in New Window [Jun 25, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251
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117.

2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252
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118.

80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220
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119.

160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet
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120.

F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd