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20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
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106.

20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn Open Details in New Window [Feb 02, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet
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107.

F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Feb 02, 2026]

PARAMETER SYMBOL VALUE UNIT 16N60 F16N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 200V N-Channel Enhancement Mode Power Mosfet D18n20 to-252
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108.

18A 200V N-Channel Enhancement Mode Power Mosfet D18n20 to-252 Open Details in New Window [Feb 02, 2026]

PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 700V Fast Recovery Diode Mur1070 to-220-2L
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109.

10A 700V Fast Recovery Diode Mur1070 to-220-2L Open Details in New Window [Mar 02, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G60t65D to-3p
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110.

Insulated Gate Bipolar Transistor IGBT G60t65D to-3p Open Details in New Window [Mar 02, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off
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111.

800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off Open Details in New Window [Feb 28, 2026]

PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220
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112.

50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 Open Details in New Window [Feb 02, 2026]

PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

for Sale 35A, 50-600V Motor Press Fit Rectifier Diode MP3505
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113.

for Sale 35A, 50-600V Motor Press Fit Rectifier Diode MP3505 Open Details in New Window [Feb 02, 2026]

35A 50-600v,Motor Press Fit Rectifier Diode MP3505--MP356 35A,50V Motor Press Fit Rectifier Diode MP3505 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical ...

Company: Changzhou Shunye Electronics Co., Ltd.

50A, 400V, Press Fit Diode Bp504
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114.

50A, 400V, Press Fit Diode Bp504 Open Details in New Window [Jan 22, 2026]

WE supply 35A, 50A,200,400V,600V, PRESS FIT DIODE 504 welcome to order. Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics Picture VRWM IF IFSM (A)8.3ms ...

Company: Changzhou Shunye Electronics Co., Ltd.

25A. 1000V. Button Diode Rectifier Ar2510
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115.

25A. 1000V. Button Diode Rectifier Ar2510 Open Details in New Window [Jan 22, 2026]

we supply 25A, 35A, 50A, 400V, 600V, 1000V button diode. 25A 1000V AUTOMOTIVE BUTTON DIODE-AR2510 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM ...

Company: Changzhou Shunye Electronics Co., Ltd.

4A, 1000V Bridge Rectifier Diode Kbl10/RS407
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116.

4A, 1000V Bridge Rectifier Diode Kbl10/RS407 Open Details in New Window [Dec 31, 2025]

4A,50-1000V-BRIDGE RECTIFIER-KBL005-KBL10(RS401-407) Datasheet Products list BRIDGE RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

Bridge Rectifier Diode 25A 600V RS2505m
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117.

Bridge Rectifier Diode 25A 600V RS2505m Open Details in New Window [Dec 31, 2025]

25A,50-1000V-BRIDGE RECTIFIER-RS2501M--RS2507M 25A,600V,BRIDGE RECTIFIER-RS2505M Datasheet Products list BRIDGE RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

Mur1560 to-220-2L 15A 600V Fast Recovery Diode
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118.

Mur1560 to-220-2L 15A 600V Fast Recovery Diode Open Details in New Window [Feb 02, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 60A N-Channel Sic Power Mosfet Dhc1m040120W to-247
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119.

1200V 60A N-Channel Sic Power Mosfet Dhc1m040120W to-247 Open Details in New Window [Dec 31, 2025]

60A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252
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120.

7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 Open Details in New Window [Dec 31, 2025]

PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd