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106. 20A 150V Schottky Barrier Diode Mbr20150CT to-220 
[Nov 28, 2025]
[Nov 28, 2025] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
107. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
108. 160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
109. 60A 400V Fast Recovery Diode Mur6040DCT to-3p [Sep 01, 2025]
[Sep 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
110. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
111. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
112. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 [Aug 01, 2025]
[Aug 01, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
113. DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet [Jun 30, 2025]
[Jun 30, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...
114. 10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
115. 20A 45V Schottky Barrier Diode Mbr2045CT to-220 [Jun 25, 2025]
[Jun 25, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
116. 10A 200V Schottky Barrier Diode Mbr10200CT to-220 [Jun 25, 2025]
[Jun 25, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
117. 2A 650V N-Channel Enhancement Mode Power Mosfet B2n65 to-251 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...
118. 80A 80V N-Channel Enhancement Mode Power Mosfet DHD80n08 to-252 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
119. 160A 60V N-Channel Enhancement Mode Power Mosfet Dh150n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH150N06/DHI150N06/DHE150N06 DH150N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
120. F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
