Jiangsu Profile
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Product List
211. 140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220 
[Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...
212. Insulated Gate Bipolar Transistor IGBT G25t120d to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 50 A Collector Current (Tc=100ºC) 25 A Pulsed ...
213. 80A 80V N-Channel Enhancement Mode Power Mosfet Dhe80n08 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
214. 40A 200V Fast Recovery Diode Mur4020DCT to-3p [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
215. 20A 200V Schottky Barrier Diode Mbr20200CT to-220 [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
216. 12A 600V N-Channel Enhancement Mode Power Mosfet F12n60 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
217. 10A 600V N-Channel Enhancement Mode Power Mosfet F10n60 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
218. 16A 400V Fast Recovery Diode Mur1640CT to-220 [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
219. 1200V 75A IGBT Module Dgc75c120m2t [Jun 23, 2025]
[Jun 23, 2025] 75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which ...
220. High-Power Skkt 500-600A IGBT Module for Reliable Performance [Apr 08, 2026]
[Apr 08, 2026] Product name SKKT 500-600A Silicon Controlled Rectifier SCR Thyristor Module Color Black Usage HVDC transmission, reactive power compensation, air conditioning, switching switch, motor excitation, induction ...
221. Hot Selling Good Quality Mtc Industrial Heating Control SCR Module [Feb 25, 2026]
[Feb 25, 2026] Type IT(AV) VDRM/ VRRM VTM/ITM IDRM/IRRM VGT Viso A V V A mA V V(AC) MT 30A 30 400-1800 1.5 80 8 2.5 2500 MT 60A 55 400-1800 1.5 80 8 2.5 2500 MT ...
222. Hot Sale 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06 to-220 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
223. Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 230 V Collector- Emitter Voltage VCEO 230 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 15 A Base Current IB 1.5 A 3PN ...
224. 40A 45V Schottky Barrier Diode Mbr4045CT to-263 [Oct 28, 2025]
[Oct 28, 2025] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
225. 85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...
