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35A, 200V Button Diode Rectifier Ars352
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136.

35A, 200V Button Diode Rectifier Ars352 Open Details in New Window [Sep 01, 2025]

35A 200V AUTOMOTIVE BUTTON DIODE-ARS352 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

50A, 400V Diode Rectifier Block Bd504
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137.

50A, 400V Diode Rectifier Block Bd504 Open Details in New Window [Sep 01, 2025]

BLOCK DIODE-BD502-BD504 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

60A 300V Fast Recovery Diode Mur6030dcs to-3p
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138.

60A 300V Fast Recovery Diode Mur6030dcs to-3p Open Details in New Window [Sep 29, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263
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139.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252
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140.

15A 40V P-Channel Enhancement Mode Power Mosfet Aod413 to-252 Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDSS -40 V Maximum Gate-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 200V Fast Recovery Diode Mur1620CT to-220 **%off
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141.

16A 200V Fast Recovery Diode Mur1620CT to-220 **%off Open Details in New Window [Sep 29, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A, 1000V---Silicon Bridge Diode-Kbj810
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142.

8A, 1000V---Silicon Bridge Diode-Kbj810 Open Details in New Window [Sep 26, 2025]

We supply 8A, 50-1000V---Silicon bridge diode----KBJ8005-KBJ810 8A,1000V,KBJ810 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

30A 600V Fast Recovery Diode Mur3060 to-220-2L
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143.

30A 600V Fast Recovery Diode Mur3060 to-220-2L Open Details in New Window [Sep 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode Mur80fu30DCT to-3p
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144.

80A 300V Fast Recovery Diode Mur80fu30DCT to-3p Open Details in New Window [Sep 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

35A, 600V Lead Button Diode Mr756
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145.

35A, 600V Lead Button Diode Mr756 Open Details in New Window [Sep 01, 2025]

AUTOMOTIVE LEAD BUTTON DIODE-MR7507-MB760/ARL3510 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252
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146.

2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 to-252 Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT 2N65/I2N65/E2N65/B2N65/D2N65 F2N65 Drian-Source Voltage VDS 650 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G15n120d to-247
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147.

Insulated Gate Bipolar Transistor IGBT G15n120d to-247 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet
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148.

640 to-220 18A 200V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT 640/I640/E640/B640/D640 F640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A, 20V-Schottky Diode-Ss32 (SMA CASE)
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149.

3A, 20V-Schottky Diode-Ss32 (SMA CASE) Open Details in New Window [Aug 12, 2025]

3A, 20V-SCHOTTKY DIODE-SS32/SK32(SMA CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

1A, 100V, Silicon Rectifier Sm4007
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150.

1A, 100V, Silicon Rectifier Sm4007 Open Details in New Window [Aug 04, 2025]

1A,50-1000V-SILICON RECTIFIER-SM4001-SM4007 Datasheet Products list SURFACE MOUNE SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.