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130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06D TO-252
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196.

130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06D TO-252 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C
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197.

100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power MOSFET 50N04 TO-220C
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198.

50A 40V N-Channel Enhancement Mode Power MOSFET 50N04 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B
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199.

100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10 TO-220C
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200.

100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C
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201.

20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 200V Fast Recovery Diode MUR7020NCA TO-3PN
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202.

70A 200V Fast Recovery Diode MUR7020NCA TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030DCT TO-3P
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203.

60A 300V Fast Recovery Diode MUR6030DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 82V N-Channel Enhancement Mode Power MOSFET DH8290 TO-251
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204.

70A 82V N-Channel Enhancement Mode Power MOSFET DH8290 TO-251 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252
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205.

80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C
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206.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7.0A 1700V N-Channel SiC Power MOSFET DCC650M170G1 TO-247
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207.

7.0A 1700V N-Channel SiC Power MOSFET DCC650M170G1 TO-247 Open Details in New Window [Aug 13, 2026]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C
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208.

180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220
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209.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 200V Fast Recovery Diode MUR7020DCT TO-3P
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210.

70A 200V Fast Recovery Diode MUR7020DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd