Jiangsu Profile
Famous Export Brand
Product List
196. Schottky Diode 40A, 45V, 60mt045 
[Mar 06, 2026]
[Mar 06, 2026] 60A,45V,Schottky Diode:60MT045 Datasheet Products list SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...
197. SMB, 5A, 200V, Schottky Diode Sk520 [Dec 11, 2025]
[Dec 11, 2025] SMB,5A,200V,Schottky Diode SK520 Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...
198. 35A, 600V Lead Button Diode Mr756 [Mar 06, 2026]
[Mar 06, 2026] AUTOMOTIVE LEAD BUTTON DIODE-MR7507-MB760/ARL3510 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...
199. 80A 68V N-Channel Enhancement Mode Power MOSFET DTG080N07N TO-220C [Sep 10, 2026]
[Sep 10, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
200. 373A 100V N-Channel Enhancement Mode Power MOSFET DSU014N10N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...
201. 3A 800V N-Channel Enhancement Mode Power MOSFET F3N80 TO-220F [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
202. 200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03 TO-220 [Sep 30, 2026]
[Sep 30, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
203. 18A 500V N-Channel Enhancement Mode Power MOSFET 18N50 TO-220C [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
204. 25A 100V P-Channel Enhancement Mode Power MOSFET DH100P25D TO-252B [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH100P25/ DH100P25I/ DH100 P25E/ DH100P25B/ DH100P25D DH100P25F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
205. 90A 200V N-Channel Enhancement Mode Power MOSFET DH100N20D TO-3PN [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
206. 88A 60V N-Channel Enhancement Mode Power MOSFET DH070N06 TO-220 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
207. 30A 1200V Fast Recovery Diode MUR30120 TO-220F [Sep 30, 2026]
[Sep 30, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
208. 20A 100V Schottky Barrier Diode MBR20100CS TO-252 [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current ...
209. 80A 200V Fast Recovery Diode MUR80FU20NCA TO-247 [Sep 30, 2026]
[Sep 30, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
210. 5A 650V N-Channel Enhancement Mode Power MOSFET F5N65 TO-220F [Sep 30, 2026]
[Sep 30, 2026] PARAMETER SYMBOL VALUE UNIT F5N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
