Jiangsu Profile
Product List
4711. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4712. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4713. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...
4714. 155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4715. 120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
4716. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4717. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
4718. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4719. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4720. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4721. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4722. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4723. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
4724. Silicon Controlled Rectifier Thyristor [Jun 05, 2025]
[Jun 05, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: Our KP500a KP1000a KP2500a SCR Thyristor Module stands out with its exceptional ability to function flawlessly across a broad temperature ...
4725. SCR Thyristor Power Module with IGBT and Diode Thyristor Phase Control SCR Thyristor Fast Turn off ... [Jun 03, 2025]
[Jun 03, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: Experience unparalleled reliability and stability with our KP500a KP1000a KP2500a SCR Thyristor Module, expertly engineered to excel in extreme ...
