Jiangsu Profile

Product List
4351. 180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
4352. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4353. International Test CE 3 Phase AC Drive VFD Motor Control Top Chinese AC Drive Manufacturer ...
[May 15, 2023]

Product Description Model H100&DV6000 Series Frequency Converter Power range 3 phase AC 380V~480V (-10% ~ +10%) 0.75KW ~ 550KW Output Frequency Range 0.00~1000Hz (default :50/60hz) Control Mode V/F ...
4354. Advanced Hall Effect Sensor for Precision Healthcare Applications
[Jul 09, 2025]

Advantages * Can be customized * High accuracy * Very good linearity * No insertion losses * Low power consumption * Wide current measuring range * High immunity to external interference * Low ...
Company: Cheemi Technology Co., Ltd.
4355. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
[Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4356. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b
[Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
4357. 250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
[Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4358. 200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...
4359. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4360. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4361. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn
[Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...
4362. 155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4363. 120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263
[Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
4364. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4365. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
