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120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c
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4951.

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
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4952.

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b
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4953.

19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b
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4954.

25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b
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4955.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30ad to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c
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4956.

180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c
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4957.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

International Test CE 3 Phase AC Drive VFD Motor Control Top Chinese AC Drive Manufacturer ...
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4958.

International Test CE 3 Phase AC Drive VFD Motor Control Top Chinese AC Drive Manufacturer ... Open Details in New Window [May 15, 2023]

Product Description Model H100&DV6000 Series Frequency Converter Power range 3 phase AC 380V~480V (-10% ~ +10%) 0.75KW ~ 550KW Output Frequency Range 0.00~1000Hz (default :50/60hz) Control Mode V/F ...

Company: JIANGSU CHANGRONG ELECTRICAL APPLIANCE CO., LTD.

Advanced Hall Effect Sensor for Precision Healthcare Applications
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4959.

Advanced Hall Effect Sensor for Precision Healthcare Applications Open Details in New Window [Jul 09, 2025]

Advantages * Can be customized * High accuracy * Very good linearity * No insertion losses * Low power consumption * Wide current measuring range * High immunity to external interference * Low ...

Company: Cheemi Technology Co., Ltd.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263
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4960.

130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b
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4961.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263
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4962.

250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263
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4963.

200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e
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4964.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263
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4965.

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd