Jiangsu Profile
Product List
4606. Advanced Hall Effect Sensor for Precision Healthcare Applications 
[Jul 09, 2025]
[Jul 09, 2025] Advantages * Can be customized * High accuracy * Very good linearity * No insertion losses * Low power consumption * Wide current measuring range * High immunity to external interference * Low ...
Company: Cheemi Technology Co., Ltd.
4607. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4608. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
4609. 250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04e to-263 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4610. 200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...
4611. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4612. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4613. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06D to-3pn [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 240 A BVGSS ±20 V EAS - - 1190 mJ Ptot - - 2 W Rdson - - 2.2 mΩ Features Fast Switching Low ON ...
4614. 155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4615. 120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
4616. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4617. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
4618. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4619. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
4620. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
