Jiangsu Profile

Product List
11626. 21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10lb to-251b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11627. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11628. 120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11629. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11630. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c
[Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
11631. 210A 60V N-Channel Enhancement Mode Power Mosfet Dh027n06 to-220c
[Jun 23, 2025]

Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
11632. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11633. 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11634. 150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11635. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...
11636. 20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11637. 9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
11638. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
11639. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11640. 220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
