Jiangsu Profile
Product List
11641. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h035r to-220c 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH10H035R/ DHE10H035R DHF10H035R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11642. 240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11643. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11644. 88A 60V N-Channel Enhancement Mode Power Mosfet DHD070n06 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH070N06DHI070N06/DHE070N06/DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11645. 220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11646. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11647. 180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...
11648. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
11649. 21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10lb to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11650. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11651. 120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11652. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11653. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
11654. 210A 60V N-Channel Enhancement Mode Power Mosfet Dh027n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
11655. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
