Jiangsu Profile

Product List
11656. 70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11657. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
11658. 120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...
11659. 40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
11660. 80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
[Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...
11661. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
11662. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08d to-252b
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 19 A (T=100ºC) 13 A Drain ...
11663. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b
[Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
11664. 180A 85V N-Channel Enhancement Mode Power Mosfet DSG041n08na to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
11665. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
11666. High-Precision DC 12-15V Hall Current Sensor for Auto Compressors
[Jun 24, 2025]

Principle CHK_LTB15D4 series Hall Effect Open Loop Current Sensor is a current measurement device which develops on base of the hall effect principle, wherein a Hall-effect device (HED) produces an output voltage ...
Company: Cheemi Technology Co., Ltd.
11667. High Precision DC Current Sensor for UPS Systems
[Jun 24, 2025]

Principle CHK_E15D4 series Hall Effect Open Loop Current Sensor is a current measurement device which develops on base of the hall effect principle, wherein a Hall-effect device (HED) produces an output voltage ...
Company: Cheemi Technology Co., Ltd.
11668. High-Precision Hall Effect Current Sensor with Single Power Supply
[Jun 24, 2025]

Principle CHK_E5S2 series Hall Effect Open Loop Current Sensor is a current measurement device which develops on base of the hall effect principle, wherein a Hall-effect device (HED) produces an output voltage linearly ...
Company: Cheemi Technology Co., Ltd.
11669. Open Loop Hall Effect Transducer for Reliable Current Sensing
[Jun 24, 2025]

Principle CHK_FK15D4H series Hall Effect Open Loop Current Sensor is a current measurement device which develops on base of the hall effect principle, wherein a Hall-effect device (HED) produces an output voltage ...
Company: Cheemi Technology Co., Ltd.
11670. High-Precision DC Transmission Smart Grid Hall Current Sensor
[Jun 24, 2025]

Principle CHK_EKA15D4 series Hall Effect Open Loop Current Sensor is a current measurement device which develops on base of the hall effect principle, wherein a Hall-effect device (HED) produces an output voltage ...
Company: Cheemi Technology Co., Ltd.
