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2866. G180n03D5 30V 170A Aons66612t Substitute Mosfet with Dfn Package 
[Jun 14, 2022]
[Jun 14, 2022] G180N03D5 30V 170A AONS66612T Substitute MOSFET with DFN Package General Description The G180N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2867. Factory Directly Transistor 30V 8A Dfn Package Mosfet for Electronic Cigarette [Jun 14, 2022]
[Jun 14, 2022] Factory Directly Transistor 30V 8A DFN Package MOSFET for Electronic Cigarette General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2868. Original Brand G07p04s Mosfet 40V 7A P Mosfet with Sop-8 Package [Jun 14, 2022]
[Jun 14, 2022] Original Brand G07P04S MOSFET 40V 7A P MOSFET with SOP-8 Package General Description The G07P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2869. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Mosfet for Mobile Fast Charger [Jun 10, 2022]
[Jun 10, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor for Mobile Fast Charger General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2870. SGS Certificate Mosfet 30V 8A of Dfn2X2 Package [Jun 10, 2022]
[Jun 10, 2022] SGS Certificate MOSFET 30V 8A of DFN2X2 Package General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2871. SGS Certificate Gt45n10d5 100V 80A Dfn Package Mosfet [Jun 10, 2022]
[Jun 10, 2022] SGS Certificate Gt45n10d5 100V 80A Dfn Package Mosfet General Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2872. Fast Delivery Dmp2008ufg-7 Alternative 19V 45A Dfn3X3 P Mosfet [May 27, 2022]
[May 27, 2022] Fast Delivery Dmp2008ufg-7 Alternative 19V 45A Dfn3X3 P Mosfet General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2873. Electronic Components Original New 30V 8A Dfn Package Mosfet [May 27, 2022]
[May 27, 2022] Electronic Components Original New 30V 8A DFN Package MOSFET General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2874. Mosfet Specialist Dual N Channel Mosfet 60V 9A Sop-8 Mosfet with Stock [May 27, 2022]
[May 27, 2022] Mosfet Specialist Dual N Channel MOSFET 60V 9A SOP-8 MOSFET with Stock General Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2875. New Original 40V 60A to-220 N Channel Mosfet with SGS Certificate [May 27, 2022]
[May 27, 2022] New Original 40V 60A TO-220 N Channel MOSFET with SGS Certificate General Description The G70N04T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2876. Dmp2008ufg-7 Equivalent Transistor Mosfet of 19V 45A Dfn3X3 P Mosfet [May 24, 2022]
[May 24, 2022] Dmp2008ufg-7 Equivalent Transistor Mosfet of 19V 45A Dfn3X3 P Mosfet General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2877. SMD Rectifier Diodes (M1-M7) [Aug 07, 2014]
[Aug 07, 2014] M1-M7 SMD Rectifier Diodes : 1A, 50V-1000V, SMA M1: 50V M2: 100V M3: 200V M4: 400V M5: 600V M6: 800V M7: 1,000V Package: SMA (DO-214AC) Packing: tape in reel, 5000 pcs/reel
Company: Wuxi Xuyang Electronics Co., Ltd.
2878. Diode (1N4001-1N4007) [Aug 21, 2024]
[Aug 21, 2024] Description: 1. For general purpose and switching 2. Peak reverse voltage: 1000V 3. Maximum average recitified current: 1.0A.
Company: Wuxi Xuyang Electronics Co., Ltd.
2879. Diac Diode [Aug 21, 2024]
[Aug 21, 2024] DIAC sets For general-purpose applications DB3: Breakover voltage (V): Min: 28 Typ: 32 Max: 36 Breakover voltage: 3 (max) Dynamic breakback voltage (V): 5 (min) Breakover current (uA): 100 (max) Peak pulse ...
Company: Wuxi Xuyang Electronics Co., Ltd.
2880. SMD Diodes (DL4933-DL4937) [Aug 21, 2024]
[Aug 21, 2024] DL4933-DL4937 SMD fast recovery rectifier diodes, 1A, 50-600V, 200nS DL4933: 50V DL4934: 100V DL4935: 200V DL4936: 400V DL4937: 600V SMD Package: MELF (DO-213AB)
Company: Wuxi Xuyang Electronics Co., Ltd.
