Jiangsu Profile

Product List
2896. 1504 4-Inch Fast Switching Diode Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 0.3mm×0.3mm IF 300mA VR 220V VF/VF1 1.48/0.8V IR/IR1 0.02μA/10nA CT 4pF Wafer Size 4 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2897. 5401 5-Inch Small-Signal Transistor Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 0.44mm×0.44mm BVCEO -150V BVCBO -160V BVEBO -5V IC -0.6A hFE 100~300 VCE(sat) -0.5V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2898. 772m 5-Inch Medium-Power Transistor Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 1.08mm×1.08mm BVCEO -30V BVCBO -50V BVEBO -7V IC -3A hFE 100~400 VCE(sat) -0.5V fT 50MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2899. D965 5-Inch Medium Power Transistor Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 1.08mm×1.08mm BVCEO 20V BVCBO 40V BVEBO 7V IC 5A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2900. D965s 5-Inch Small Signal Transistor Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 0.89mm×0.89mm BVCEO 20V BVCBO 40V BVEBO 7V IC 4A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2901. 2222A 5-Inch Fast Switching Transistor Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 0.46mm×0.46mm BVCEO 40V BVCBO 75V BVEBO 6V IC 0.6A hFE 100~300 VCE(sat) 1V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2902. Bc807 5-Inch High Frequency Small Signal Transistor Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 0.53mm×0.53mm BVCEO -500V BVCBO -45V BVEBO -6V IC -0.5A hFE 125~600 VCE(sat) -0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2903. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer
[Dec 09, 2020]

Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
2904. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer
[Dec 09, 2020]

Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
2905. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer
[Dec 09, 2020]

Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2906. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer
[Dec 09, 2020]

Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2907. P1.8 4-Inch Power Transistor Chips Diced Silicon Wafer
[Dec 09, 2020]

Die Size 1780μ m×1780μ m Size of Bonding Pad Base 495μ m×495μ m Emitter 495μ m×495μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2908. 882m 5-Inch Medium-Power Transistor Diced Silicon Wafer
[Dec 09, 2020]

Die Size 1..08mm×1.08mm BVCEO 30V IC 3A BVCBO/BVEBO 30V/7V hFE Min.:100 Max:400 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
2909. 50W + 50W HiFi Class 2.0 Stereo Digital Amplifier Tpa3116 Advanced
[May 25, 2018]

HIFI Class 2.0 Stereo Digital Amplifier TPA3116 Advanced 50W + 50W Note: The power cable is not included. If your speaker power is not large, you can use 12V 5A power supply; If large power speaker, you can use 19V ...
2910. Amplifier
[Jun 07, 2023]

The function of an on-board power amplifier is to select and preprocess the audio input signal, amplify the power, and enable the electrical signal to have the ability to drive the speaker. Car amplifiers are slightly ...
Company: Taixing Jiale Electroic Co., Ltd
