Jiangsu Profile
Product List
2776. N1.15 4 Inch Power Transistor Chips/Silicon Wafer 
[Dec 10, 2020]
[Dec 10, 2020] Die Size 1130μ m×1130μ m BVCEO 50/100/150V BVCBO 90/140/190V BVEBO 6V hFE 100-400 VCE(sat) 0.5V fT 50MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a ...
2777. 2907A 5-Inch Fast-Switching Transistor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.46mm×0.46mm BVCEO -60V BVCBO -60V BVEBO -5V IC -600mA hFE 100~300 VCE(sat) -1.6V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2778. 3904 5-Inch Fast Switching Transistor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.3mm×0.3mm BVCEO 40V BVCBO 60V BVEBO 6V IC 200mA hFE 100~300 VCE(sat) 0.3V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2779. 3906 5-Inch Fast Switching Transistor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.3mm×0.3mm BVCEO -40V BVCBO -40V BVEBO -5V IC -200mA hFE 100~300 VCE(sat) -0.4V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2780. 1504 4-Inch Fast Switching Diode Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.3mm×0.3mm IF 300mA VR 220V VF/VF1 1.48/0.8V IR/IR1 0.02μA/10nA CT 4pF Wafer Size 4 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2781. 5401 5-Inch Small-Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.44mm×0.44mm BVCEO -150V BVCBO -160V BVEBO -5V IC -0.6A hFE 100~300 VCE(sat) -0.5V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2782. 772m 5-Inch Medium-Power Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.08mm×1.08mm BVCEO -30V BVCBO -50V BVEBO -7V IC -3A hFE 100~400 VCE(sat) -0.5V fT 50MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2783. D965 5-Inch Medium Power Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.08mm×1.08mm BVCEO 20V BVCBO 40V BVEBO 7V IC 5A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2784. D965s 5-Inch Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.89mm×0.89mm BVCEO 20V BVCBO 40V BVEBO 7V IC 4A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2785. 2222A 5-Inch Fast Switching Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.46mm×0.46mm BVCEO 40V BVCBO 75V BVEBO 6V IC 0.6A hFE 100~300 VCE(sat) 1V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2786. Bc807 5-Inch High Frequency Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.53mm×0.53mm BVCEO -500V BVCBO -45V BVEBO -6V IC -0.5A hFE 125~600 VCE(sat) -0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2787. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
2788. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
2789. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2790. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
