Jiangsu Profile
Product List
2476. Tk25A10K3 Replacement Transistor Gt52n10d5 100V Mosfet N Channel for Solar Panel Smart Module 
[Jun 23, 2022]
[Jun 23, 2022] TK25A10K3 Replacement Transistor GT52N10D5 100V Mosfet N Channel for Solar Panel Smart Module General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2477. Aon6298 Substitute Mosfet Gt45n10 100V 45A Dfn5*6 Package New Original 8 Pin SMD Mosfet [Jun 14, 2022]
[Jun 14, 2022] AON6298 Substitute MOSFET GT45N10 100V 45A DFN5*6 Package New Original 8 Pin SMD Mosfet General Description The GT45N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2478. Fdma410nz Equivalent Transistor G2012 Mosfet of 20V Dfn2*2-6L Package [Jun 14, 2022]
[Jun 14, 2022] FDMA410NZ Equivalent Transistor G2012 MOSFET of 20V DFN2*2-6L Package General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2479. Electronic Components Supplies Gt045n10d5 100V 80A Mosfet [Jun 14, 2022]
[Jun 14, 2022] Electronic Components Supplies GT045N10D5 100V 80A Mosfet General Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2480. Dmp2008ufg-7 Substitute Mosfet G45p02D3 19V 45A Dfn3X3 P Channel Mosfet [Jun 10, 2022]
[Jun 10, 2022] DMP2008UFG-7 Substitute MOSFET G45P02D3 19V 45A DFN3X3 P Channel MOSFET General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2481. Electronic Components 30V 8A Dfn Package Mosfet for Electronic Cigarette [Jun 10, 2022]
[Jun 10, 2022] Electronic Components 30V 8A DFN Package MOSFET for Electronic Cigarette General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2482. Discrete Components G08n03D2 Mosfet 30V 8A of Dfn2X2 Package [Jun 10, 2022]
[Jun 10, 2022] Discrete Components G08N03D2 MOSFET 30V 8A of DFN2X2 Package General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2483. Mosfet 100V 48A Dfn5*6 Tk25A10K3 Replacement Transistor Mosfet [Jun 10, 2022]
[Jun 10, 2022] Mosfet 100V 48A DFN5*6 TK25A10K3 Replacement Transistor Mosfet General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2484. Goford Mosfet Gt52n10d5 100V Dfn5*6 Replacement of Aon6294 [Jun 10, 2022]
[Jun 10, 2022] Goford Mosfet GT52N10D5 100V DFN5*6 Replacement of AON6294 General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2485. Power Device G60n04 40V 60A To252 N Channel Mosfet for LED Power Supply [May 27, 2022]
[May 27, 2022] Power Device G60N04 40V 60A TO252 N Channel MOSFET for LED Power Supply General Description The G60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2486. Hot Sale SMD Transistor 6703 Ao6604 Replacement 20V 3A Sot-23-6 N+P Mosfet [May 26, 2022]
[May 26, 2022] Hot sale smd transistor 6703 AO6604 Replacement 20V 3A SOT-23-6 N+P Mosfet General Description The 6703 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2487. Goford G30n03A 30V 30A N Channel Dfn Mosfet for Pd [Mar 18, 2022]
[Mar 18, 2022] GOFORD G30N03A 30V 30A N Channel DFN MOSFET for PD General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2488. MCR16 600V 0.8A Sot23 Thyristor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
2489. MCR16 600V 0.8A Sot23 Thyristor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
2490. MCR100-8 600V 0.8A Sot23 Thyristor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
