Jiangsu Profile
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Product List
2446. High Efficiency Rectifier Diode 1A 400V Zg Brand UF4007 
[Jan 11, 2025]
[Jan 11, 2025] Symbols UF 4001 UF 4002 UF 4003 UF 4004 UF 4005 UF 4006 UF 4007 Units Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 Volts Maximum RMS ...
2447. 1n5817 Schottky Barrier Rectifier Sb120 100CT/Fct/DC to-220f [Jan 11, 2025]
[Jan 11, 2025] The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast ...
2448. UF800 Ultrafast Switching Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of M1L-S-19500/228 Low power loss, high ...
2449. UF800-UF808 Ultrafast Switching Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of M1L-S-19500/228 Low power loss, high ...
2450. New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package [Aug 19, 2022]
[Aug 19, 2022] New Original MOSFET Transistor SMD Package 45P40 40V50A P Channel with TO-252 Package General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2451. Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original New MOSFET Supplier 60V 20A DFN MOSFET with ROHS Certificate General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2452. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package [Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2453. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2454. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2455. Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2456. Gx1n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To92 Parts 600V 0.4A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
2457. Gx1n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To126 Parts 600V ... [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
2458. Gx1n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To251 Parts 600V ... [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
2459. Gx2n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To220 Parts 600V 2A [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
2460. Gx4n60 High Quality High Voltage N Channel Mosfet Transistor Original Component To220 Parts [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
