Jiangsu Profile
Product List
2431. ISO9001 Approved G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge 
[Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2432. 2301h -30V -2A Sot-23 Nx3008pbk Replacement Transistor Mosfet [Jun 10, 2022]
[Jun 10, 2022] Product Description 2301H -30V -2A Sot-23 NX3008PBK replacement transistor Mosfet Part Number 2301H VDSS -30V ID -2A RDS 105mΩ @ vgs=4.5V Vth -1.6V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2433. Electric Components Medium Power Field Effect Mosfet G65p06t to-220 [Jun 02, 2022]
[Jun 02, 2022] Product Description Electric Components Medium Power Field Effect Mosfet G65P06T TO-220 Part Number G65P06T VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-220 Ciss 5814 pF Crss 234 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2434. IC Dual N Channel G20n06D52 60V 20A Dfn5*6 Package Mosfet [May 27, 2022]
[May 27, 2022] Product Description IC Dual N channel G20N06D52 60V 20A DFN5*6 package mosfet Part Number G20N06D52 VDSS 60V ID 20A RDS 24mΩ @ vgs=10V Vth 1.7V Package DFN5*6 Ciss 1220 pF Crss 92 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2435. 2302 (NTK3134NT1G) 20V 2.9A N-CH Sot-23 Original Import Transistor Mosfet [May 27, 2022]
[May 27, 2022] Product Description 2302 (NTK3134NT1G) 20V 2.9A N-CH Sot-23 Original Import Transistor Mosfet Part Number 2302 VDSS 20V ID 4.3A RDS 20mΩ @ vgs=4.5V Vth 0.83V Package SOT-23 Ciss 300 pF Crss 80 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2436. Aod4189 Equivalent Transistor 45p40 -40V -50A to-252 Mosfet [May 27, 2022]
[May 27, 2022] AOD4189 Equivalent Transistor 45P40 -40V -50A TO-252 Mosfet General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2437. Fdmc4435bz Alternative Mosfet -30V P Channel Mosfet for Pd [May 27, 2022]
[May 27, 2022] FDMC4435BZ Alternative MOSFET -30V P Channel MOSFET for PD General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2438. SGS Certificate 60V 14A Sop-8 N Channel Mosfet [May 24, 2022]
[May 24, 2022] SGS Certificate 60V 14A Sop-8 N Channel Mosfet General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2439. Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet [May 24, 2022]
[May 24, 2022] IRF100B202 Alternative N Channel 100V 75A TO-220 Package Mosfet General Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2440. Power Mosfet 100V 10A to-252 for LED Lighting [May 24, 2022]
[May 24, 2022] Power Mosfet 100V 10A TO-252 for LED Lighting General Description The G10N10A-252 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2441. Factory Directly Transistor N+P Channel 60V 5A Sop-8 Mosfet [May 24, 2022]
[May 24, 2022] Factory Directly Transistor N+P Channel 60V 5A SOP-8 Mosfet General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2442. Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G01N20L 200V 2A SOT-23-3L Mosfet for Pd General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2443. 1000V 0.8A MB10s MB10f MB10m Bridge Diode [Mar 30, 2022]
[Mar 30, 2022] Symbols MB2M MB4M MB6M MB8M MB10M Units Maximum repetitive peak reverse voltage VRMM 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 140 280 420 560 700 Volts Maximum DC blocking ...
2444. 1002L 100V 2A N-Channel (AO3442) Enhancement Mode Field Effect Mosfet [Mar 18, 2022]
[Mar 18, 2022] Product Description 1002L 100V 2A N-Channel (AO3442) Enhancement Mode Field Effect mosfet Part Number 1002L VDSS 100V ID 2A RDS 180mΩ @ vgs=4.5V Vth 1.8V Package SOT-23 Ciss 190 pF Crss 13 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2445. Pb Free RoHS SGS Certified 60V Vds P-Channel to-252 Dpak Trench Mosfet G25p06 with ISO [Nov 17, 2021]
[Nov 17, 2021] Product Description Pb free Rohs SGS certified 60V VDS P-Channel To-252 Dpak Trench Mosfet G25P06 Part Number G65P06K VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-252 Ciss 5814 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
