Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Diode

» Jiangsu Product List

Product List

10A 200V Fast Recovery Diode D92-02A TO-3PN
Contact Now

556.

10A 200V Fast Recovery Diode D92-02A TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode MURF10FU60 TO-220F
Contact Now

557.

10A 600V Fast Recovery Diode MURF10FU60 TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 600V Fast Recovery Diode MURF1560 TO-220F
Contact Now

558.

15A 600V Fast Recovery Diode MURF1560 TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 150V Schottky Barrier Diode MBR40150CT TO-263
Contact Now

559.

40A 150V Schottky Barrier Diode MBR40150CT TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode MURD1060CT TO-252
Contact Now

560.

10A 600V Fast Recovery Diode MURD1060CT TO-252 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B
Contact Now

561.

30A 100V Schottky Barrier Diode MBRD30100CT TO-252B Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Schottky Barrier Diode MBR30R100CT TO-220
Contact Now

562.

30A 100V Schottky Barrier Diode MBR30R100CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C
Contact Now

563.

20A 45V Schottky Barrier Diode MBR20R45CT TO-220C Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 53 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.42 max 0.50 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 80V Schottky Barrier Diode MBR20R80CT TO-220
Contact Now

564.

20A 80V Schottky Barrier Diode MBR20R80CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 800V Fast Recovery Diode MURF1080 TO-220F
Contact Now

565.

10A 800V Fast Recovery Diode MURF1080 TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode MBR3045CT TO-263
Contact Now

566.

30A 45V Schottky Barrier Diode MBR3045CT TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode MBR16100CT TO-220
Contact Now

567.

16A 100V Schottky Barrier Diode MBR16100CT TO-220 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 300V Fast Recovery Diode MUR80FU30BCT TO-247
Contact Now

568.

80A 300V Fast Recovery Diode MUR80FU30BCT TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode MUR80FU40DCT TO-3P
Contact Now

569.

80A 400V Fast Recovery Diode MUR80FU40DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 60V Schottky Barrier Diode MBR3060CT TO-220M
Contact Now

570.

30A 60V Schottky Barrier Diode MBR3060CT TO-220M Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd