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Mbr4060CT to-3p 40A 60V Schottky Barrier Diode
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511.

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode Mur6060DCT to-3p
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512.

60A 400V Fast Recovery Diode Mur6060DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 400V Fast Recovery Diode Mur9040DCT to-3p
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513.

90A 400V Fast Recovery Diode Mur9040DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220
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514.

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode Mbr16100CT to-220
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515.

16A 100V Schottky Barrier Diode Mbr16100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 150V Schottky Barrier Diode Mbr40150CT to-263
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516.

40A 150V Schottky Barrier Diode Mbr40150CT to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220
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517.

20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode Mur80fu40bct to-247
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518.

80A 400V Fast Recovery Diode Mur80fu40bct to-247 Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode Mbr3045CT to-263
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519.

30A 45V Schottky Barrier Diode Mbr3045CT to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Mur1560 to-220-2L 15A 600V Fast Recovery Diode
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520.

Mur1560 to-220-2L 15A 600V Fast Recovery Diode Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220
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521.

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1500V Fast Recovery Diode Mur15150 to-220-2L
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522.

15A 1500V Fast Recovery Diode Mur15150 to-220-2L Open Details in New Window [Aug 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 400V Fast Recovery Diode Mur1540 to-220-2L
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523.

15A 400V Fast Recovery Diode Mur1540 to-220-2L Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 400 typ 450 IR(uA)25ºC max 20 VF (V) 25ºC typ. 1.2 max 1.4 IF(A) Single chip package 7.5 IF(A) Dual chip package 15 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L
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524.

650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L Open Details in New Window [Jun 23, 2025]

6A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 80V Low Schottky Barrier Diode Mbr20r80CT to-220
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525.

20A 80V Low Schottky Barrier Diode Mbr20r80CT to-220 Open Details in New Window [Jun 25, 2025]

SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd