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40A 200V Fast Recovery Diode Mur4020DCT to-3p
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526.

40A 200V Fast Recovery Diode Mur4020DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Schottky Barrier Diode Mbr20200CT to-220
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527.

20A 200V Schottky Barrier Diode Mbr20200CT to-220 Open Details in New Window [Jun 23, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 400V Fast Recovery Diode Mur1640CT to-220
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528.

16A 400V Fast Recovery Diode Mur1640CT to-220 Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 150V Schottky Barrier Diode Mbr30150CT to-220
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529.

30A 150V Schottky Barrier Diode Mbr30150CT to-220 Open Details in New Window [Jun 25, 2025]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Low Schottky Barrier Diode Mbr10r150CT to-252
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530.

10A 150V Low Schottky Barrier Diode Mbr10r150CT to-252 Open Details in New Window [Jun 25, 2025]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 60V Schottky Barrier Diode Mbr1060CT to-220
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531.

10A 60V Schottky Barrier Diode Mbr1060CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220
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532.

10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220 Open Details in New Window [Jun 23, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 400V Fast Recovery Diode Mur2040 to-220-2L
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533.

20A 400V Fast Recovery Diode Mur2040 to-220-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 45V Schottky Barrier Diode Mbr1045CT to-220m
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534.

10A 45V Schottky Barrier Diode Mbr1045CT to-220m Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode
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535.

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode Mur6060DCT to-3p
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536.

60A 400V Fast Recovery Diode Mur6060DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 400V Fast Recovery Diode Mur9040DCT to-3p
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537.

90A 400V Fast Recovery Diode Mur9040DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220
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538.

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode Mbr16100CT to-220
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539.

16A 100V Schottky Barrier Diode Mbr16100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 150V Schottky Barrier Diode Mbr40150CT to-263
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540.

40A 150V Schottky Barrier Diode Mbr40150CT to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd