Jiangsu Profile
Product List
331. High Quality Beam Power Electron Tube 
[May 06, 2019]
[May 06, 2019] The 6146B is a beam power tube of high power sensitivity for RF Power amplifier and oscillator service and as an AF power amplifier and modulator in both mobile and fixed equipmen, the 6146B is unilaterally ...
Company: Sinotronics Co., Ltd.
332. 3415A -20V -4A P Channel Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description Transistor 3415A 20V 4A Mosfet with ESD led display power supply Part Number 3415A VDSS -20V ID -4A RDS 35 mΩ @ vgs=4.5V Vth -0.93V Package SOT-23 Ciss 950 pF Crss 120 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
333. High Quality Beam Pentode Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
334. Kt88-T Beam Pentode 6.3V Indirectly Heated Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
335. Beam Pentode 6.3V Indirectly Heated Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z beam pentode 6.3v indirectly heated , the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A.F. amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
336. Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for BMS Application [Jun 10, 2022]
[Jun 10, 2022] Product Description GT12N06S 60V 12A Silicon Triode Transistor Mosfet for BMS application Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
337. (AO4264) Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for Charger [Mar 19, 2021]
[Mar 19, 2021] Product Description (AO4264) Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for charger Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
338. Electronic Tetrode Tube Triode 18n20 200V 18A to-251 Transistor Mosfet [Mar 19, 2021]
[Mar 19, 2021] Product Description electronic tetrode tube triode 18N20 200V 18A TO-251 Transistor Mosfet Part Number 18N20 VDSS 200V ID 18A RDS 136mΩ @ vgs=10V Vth 1~3V Package TO-251 Ciss 836 pF Crss 3.8 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
339. G08n06s 60V 6A IGBT Power Transistor Power Supply Triode Mosfet [Mar 19, 2021]
[Mar 19, 2021] Product Description G08N06S 60V 6A IGBT power transistor power supply triode MOSFET Part Number G08N06S VDSS 60V ID 6A RDS 24 mΩ @ vgs=10V Vth 1.7V Package TO-252 Ciss 979 pF Crss 100 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
340. Crystal Diode Voltage Regulator Diode Varistor Diode Crystal Triode Field Effect Transistor High ... [Aug 29, 2019]
[Aug 29, 2019] Crystal Diode Voltage regulator diode Varistor Diode Crystal triode Field effect transistor High and Low Temperature Aging Testing Chiller Display function Application ...
Company: Lneya Thermo Refrigeration Co., Ltd.
341. Relay Diode Triode Capacitor Connector Potentiometer Safety Component Sensor Inductor ... [Aug 29, 2019]
[Aug 29, 2019] Relay Diode Triode Capacitor Connector Potentiometer Safety Component Sensor Inductor Electroacoustic Device High and Low Temperature Aging Testing Chiller Display function Application ...
Company: Lneya Thermo Refrigeration Co., Ltd.
342. High Quality Twin Triode Designed Radio Frequency Amplifier Electron Tube [May 06, 2019]
[May 06, 2019] 12AT7 is a miniature, high-mu, twin triode designed for use as a grounded-grid radio frequency amplifier or as a combined oscillator and mixer at frequencier approximately 300 megacycles, heater voltage; 6.3v (parallel ...
Company: Sinotronics Co., Ltd.
343. High Quality Filamentary Type Triode Designed Electron Tube [May 06, 2019]
[May 06, 2019] The 300B-98 is filamentary type triode designed for use as an audio freguency power amplifier, Characteritics; Filament voltage; 5.0volts plate current 60 milliamperes power output 8 watts filament current 1.2 amperes. ...
Company: Sinotronics Co., Ltd.
344. High Quality Zero Bias Power Triode Electron Tube [May 06, 2019]
[May 06, 2019] The 572B (type811A and 811A/B replacement) zero bias power triode amplifier, Characteritics; Filament voltage; 6.3volts current 4.0 amps. Amplification factor; 190, interelectrode capacitance; Grid to plate 6.0mmf, Grid ...
Company: Sinotronics Co., Ltd.
345. Zero Bias Power Triode Electron Tube [May 06, 2019]
[May 06, 2019] The 572B (type811A and 811A/B replacement) zero bias power triode amplifier , Characteritics; filament voltage; 6.3volts current 4.0 amps. amplification factor; 190, interelectrode capacitance; Grid to plate 6.0mmf , ...
Company: Sinotronics Co., Ltd.
