Jiangsu Profile
Product List
316. G30n03A 30V 30A N Mosfet for Pd 
[Aug 19, 2022]
[Aug 19, 2022] Product Description G30N03A 30V 30A N Mosfet for Pd Part Number G30N03A VDSS 30V ID 30A RDS 9.2mΩ @ vgs=4.5V Vth 1.5V Package DFN3*3 Ciss 1490 pF Crss 135 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
317. Gt45n06 Goford Mosfet 60V 45A Dfn Package [Aug 19, 2022]
[Aug 19, 2022] Product Description Gt45n06 Goford Mosfet 60V 45A Dfn Package Part Number GT45N06 VDSS 60V ID 45A RDS 6.8mΩ @ vgs=10V Vth 1.7V Package DFN3*3 Ciss 1988 pF Crss 14 pF Datasheet You may ...
Company: Wuxi Goford Semiconductor Co., Ltd.
318. G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger [Aug 19, 2022]
[Aug 19, 2022] Product Description G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger Part Number G12P03A VDSS -30V ID -12A RDS 19 mΩ @ vgs=4.5V Vth -1.6V Package DFN3*3 Ciss 1800 pF Crss 216 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
319. Dtd123tchzgt116 [Nov 14, 2022]
[Nov 14, 2022] 500MA/40V DIGITAL TRANSISTOR (WI 500MA/40V DIGITAL TRANSISTOR (WI 500MA/40V DIGITAL TRANSISTOR (WI
320. L2n7002lt1g [Nov 14, 2022]
[Nov 14, 2022] MOSFET 115 mAmps,60VN SOT-23 MOSFET 115 mAmps,60VN SOT-23 MOSFET 115 mAmps,60VN SOT-23
321. Radial Lead Cut Machine; Components Loose Cut Machine; Triode Cutter [Jun 11, 2021]
[Jun 11, 2021] Compact Radial Machine Elctronics; Capacitor Cutting Machine X-5060 Product Description Before cut machine : Atere cut machine CUT Specification: Automatic radial capacitor/LED lead ...
322. 2sc2290 Hg2290 Transistor [Aug 14, 2024]
[Aug 14, 2024] New 2SC2290 is produced by HG China. We will send the parts soon. But if your request is very urgent, I don't suggest you buy our parts. All the 2SC2290 you purchase in one shipment use the dies(chips) of the ...
323. SD1446 Hg1446 Transistor [Aug 14, 2024]
[Aug 14, 2024] New SD1446 is produced by HG China. We will send the parts soon. But if your request is very urgent, I don't suggest you buy our parts. All the SD1446 you purchase in one shipment use the dies(chips) of the same ...
324. Hg2879 2sc2879 Transistor [Aug 14, 2024]
[Aug 14, 2024] New 2SC2879 is produced by HG China. Can replace Toshiba 2SC2879 well. We will send the parts soon. But if your request is very urgent, I don't suggest you buy our parts. All the 2SC2879 you purchase in one ...
325. Rhomboid Needle Baseplate with Enclosure for IGBT Module [Nov 21, 2024]
[Nov 21, 2024] Phomboid needle baseplate with enclosure for IGBT/SiC module of EV/HEV Material:Copper/aluminum/copper aluminum
326. Diamond Shaped Baseplate with Enclosure for IGBT Module [Nov 21, 2024]
[Nov 21, 2024] Diamond shaped baseplate with enclosure for IGBT module of Electric vehicles Heatsink for liquid cooling solution
327. Water Drop Pinfin Baseplate for IGBT/Sic Module of EV [Nov 21, 2024]
[Nov 21, 2024] Water drop pinfin baseplate for IGBT module of EV Heatsink of cooling solution
328. High Quality out Beam Tetrode Electron Tube for Power Amplifier [May 06, 2019]
[May 06, 2019] Output beam tetrode with eight foots, an absolute maximum anode dissipation rating of 12w used for power amplifier, heater voltage; 6.3v, heater current; 0.45A, Inter electrode capacitance; Imput; 9PF, output; 7.5PF, ...
Company: Sinotronics Co., Ltd.
329. High Quality Beam Power Electron Tube [May 06, 2019]
[May 06, 2019] The 6146B is a beam power tube of high power sensitivity for RF Power amplifier and oscillator service and as an AF power amplifier and modulator in both mobile and fixed equipmen, the 6146B is unilaterally ...
Company: Sinotronics Co., Ltd.
330. High Quality Beam Pentode Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
