Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Transistor

» Jiangsu Product List

Product List

High-Performance Diode Rectifier Mosfet Transistor for Power Applications GF15h60df Transistor
Contact Now

16.

High-Performance Diode Rectifier Mosfet Transistor for Power Applications GF15h60df Transistor Open Details in New Window [Mar 06, 2026]

Product Description Product Features Featuring a Single Mesa Structure, this exceptional product ensures optimal performance and reliability. Crafted with a state-of-the-art Table Glass Passivation Process, ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Versatile Mosfet Transistor for Standard Mount Diode Rectifier Applications GF15h60df Transistor
Contact Now

17.

Versatile Mosfet Transistor for Standard Mount Diode Rectifier Applications GF15h60df Transistor Open Details in New Window [Mar 06, 2026]

Product Description Exquisite Features of Our Product Ingeniously crafted with a Single Mesa structure that ensures unparalleled performance and efficiency. Expertly utilizes a Table Glass Passivation Process to ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Durable Powerpassion Diode Rectifier Mosfet Transistor for Electronics GF15h60df Transistor
Contact Now

18.

Durable Powerpassion Diode Rectifier Mosfet Transistor for Electronics GF15h60df Transistor Open Details in New Window [Mar 06, 2026]

Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Standard Mount Diode Rectifier Mosfet Transistor by Powerpassion GF15h60df Transistor
Contact Now

19.

Standard Mount Diode Rectifier Mosfet Transistor by Powerpassion GF15h60df Transistor Open Details in New Window [Mar 06, 2026]

Product Description Product features: Our advanced technology showcases remarkable features that set the standard in electronic components, ensuring superior performance and durability. Single mesa structure (Single ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

BTA16 600bw Mosfet N-Channel Transistor 600V 170A to-220ab Tube List BTA16-600bw GF15h60df ...
Contact Now

20.

BTA16 600bw Mosfet N-Channel Transistor 600V 170A to-220ab Tube List BTA16-600bw GF15h60df ... Open Details in New Window [Mar 06, 2026]

Product Description Product features Single mesa structure (Single Mesa), Table glass passivation process, Voltage stability The ability of strong current shock resistance The applicable model: BTA12 The ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off
Contact Now

21.

Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off Open Details in New Window [Nov 28, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 230 V Collector- Emitter Voltage VCEO 230 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 15 A Base Current IB 1.5 A 3PN ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw
Contact Now

22.

50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

NPN Epitaxial Silicon Transistor Tip41c to-220 to-252
Contact Now

23.

NPN Epitaxial Silicon Transistor Tip41c to-220 to-252 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A *Collector Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126
Contact Now

24.

Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBD 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base Current(continuous) VEBO 5 V Collector current IC 3 A Collector pulse current (TP < ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220
Contact Now

25.

Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 5 A *Collector Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

PLC Signal Amplifier Module Conversion Input Optocoupler Isolation Transistor Tigger Voltage 24V
Contact Now

26.

PLC Signal Amplifier Module Conversion Input Optocoupler Isolation Transistor Tigger Voltage 24V Open Details in New Window [Oct 16, 2025]

Product Description Industrial 16/32 Channel MOSFET Relay Module – PLC Amplification Module MOSFET signal conversion module is a solid-state switching device based on metal oxide semiconductor field-effect transistor ...

Company: Changzhou ZERO Intelligent Technology Co., Ltd.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
Contact Now

27.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 12 A Collector Current (Tc=100&ordm;C) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
Contact Now

28.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(TJ=25&ordm;C) 60 A Collector Current (TJ=100&ordm;C) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
Contact Now

29.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(TJ=25&ordm;C) 80 A Collector Current (TJ=100&ordm;C) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
Contact Now

30.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES &plusmn;30 V Collector Current IC(T=25&ordm;C) 80 A Collector Current (Tc=100&ordm;C) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd