Jiangsu Profile
Product List
1846. Electronic Components Supplier Gt088n06t 60V 60A Mosfet 
[May 26, 2022]
[May 26, 2022] Product Description Electronic Components Supplier GT088N06T 60V 60A Mosfet Part Number GT088N06T VDSS 60V ID 60A RDS 8 mΩ @ vgs=10V Vth 1.4V Package TO-220 Ciss 1620 pF Crss 415 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1847. Factory Directly Goford 5n20A 200V 5A Mosfet for LED Flikerless Controller [May 24, 2022]
[May 24, 2022] Product Description Factory Directly GOFORD 5N20A 200V 5A MOSFET for Led Flikerless Controller Part Number 5N20A VDSS 200V ID 5A RDS 440mΩ @ vgs=10V Vth 1.55V Package TO-252 255pF Crss 2.3 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1848. Discrete Component 650V 20A to-220f Package Super Junction Mosfet [May 24, 2022]
[May 24, 2022] Product Description Discrete Component 650V 20A TO-220F Package Super Junction Mosfet Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature rise: ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1849. RoHS Compliant G12p10K Mosfet 100V 12A to-252 Package P Channel Mosfet [May 24, 2022]
[May 24, 2022] Product Description RoHS Compliant G12P10K Mosfet 100V 12A TO-252 Package P Channel Mosfet Part Number G12P10K VDSS -100V ID -12A RDS 170mΩ @ vgs=10V Vth -1.9V Package TO-252 Ciss 760 pF Crss 170 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1850. Reach Approved 100V 60A Dfn Package Mosfet [May 24, 2022]
[May 24, 2022] Product Description REACH Approved 100V 60A Dfn Package Mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better Rdson. Part ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1851. RoHS Compliant 60V 200A N Channel to-220 Package Mosfet [May 24, 2022]
[May 24, 2022] Product Description RoHS Compliant 60V 200A N Channel TO-220 Package Mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1852. China Mosfet Manufacturer P Channel 15V 70A to-252 Mosfet [May 24, 2022]
[May 24, 2022] Product Description China Mosfet Manufacturer P Channel 15V 70A TO-252 MOSFET Part Number G70P02K VDSS -15V ID -70A RDS 5mΩ @ vgs=10V Vth -0.6V Package TO-252 Ciss 3500pF Crss 577 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1853. Electronic Components 100V 60A Dfn Package Mosfet [May 24, 2022]
[May 24, 2022] Product Description Electronic Components 100V 60A Dfn Package Mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1854. Irlml6402tr Substitute Mosfet 2301 -20V P Channel Mosfet [May 24, 2022]
[May 24, 2022] Product Description IRLML6402TR Substitute MOSFET 2301 -20V P Channel Mosfet Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1855. Fast Delivery 100V 3A Mosfet for Power Conversion [May 21, 2022]
[May 21, 2022] Product Description Fast Delivery 100V 3A Mosfet for Power Conversion Part Number G1003A VDSS 100V ID 3A RDS 147mΩ @ vgs=10V Vth 1.5V Package SOT-23-3 Ciss 622 pF Crss 24 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1856. Power Transistor Gt095n10d5 100V 60A Mosfet for Smart Module Junction Box [May 21, 2022]
[May 21, 2022] Product Description Power Transistor GT095N10D5 100V 60A Mosfet for Smart Module Junction Box Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1857. Factory Directly N Channel Trench Mosfet of 200V Sot-23-3L [May 21, 2022]
[May 21, 2022] Product Description Factory Directly N Channel Trench Mosfet of 200V SOT-23-3L Part Number G01N20LE VDSS 200V ID 1.7A RDS 0.56Ω @ vgs=10V Vth 1.8V Package SOT-23-3L Ciss 580 pF Crss 30 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1858. Diode -8A Field Effect Transistor Trench Technology Mosfet P Channel 60V Dfn3*3-8L G08p06D3 [Mar 30, 2022]
[Mar 30, 2022] Diode -8A Field Effect Transistor Trench Technology Mosfet P Channel 60V DFN3*3-8L G08P06D3 Part Number G08P06D3 VDSS -60V ID -8A RDS(on)typical 42mohm(VGS=10V) RDS(on)max 52mohm(VGS=10V) Vth ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1859. Factory Directly Aon2403 Equivalent Transistor 1216D2 12V 16A Mosfet [Mar 18, 2022]
[Mar 18, 2022] Product Description Factory Directly Aon2403 Equivalent Transistor 1216D2 12V 16A Mosfet Product Parameters You may like For more products details, please contact us ! Packaging & Shipping 1. The ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1860. Factory Directly N-Channel Dfn 60V 53A Mosfet for Pd [Mar 18, 2022]
[Mar 18, 2022] Product Description Factory Directly N-Channel DFN 60V 53A MOSFET for PD Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better ...
Company: Wuxi Goford Semiconductor Co., Ltd.
