Jiangsu Profile
Product List
11566. Hall-Effect Linar Integrated Circuits (OH49E) 
[Aug 20, 2024]
[Aug 20, 2024] OH49E Series LINEAR HALL-EFFECT IC Order information Type OH49E-S Operating Temperature -20~100 degree Package SOT23 3000PCS/reel Type OH49E -20~100degree Package TO-92S 1000PCS/bag General Description The ...
Company: Nanjing Ouzhuo Technology Co., Ltd.
11567. Un-Polished Raw Sic Wafer Manufacturer Without Lapping [Aug 22, 2025]
[Aug 22, 2025] Un-polished raw SiC wafer manufacturer without lapping We can supply raw SiC wafer without lapping and polishing process. Come and have a look at HMT un-polished SiC wafer for machine testing only. Both 4 inch and 6 ...
Company: Homray Material Technology
11568. 50.8mm Raw Cut Sic Wafer Manufacturer 2 Inch 1200um Thickness [Aug 22, 2025]
[Aug 22, 2025] 50.8mm Raw Cut SiC Wafer Manufacturer 2 inch 1200um Thickness HMT offer guaranteed without lapping raw cut 2 inch SiC wafer for lapping machine testing,abrasive testing, diamond grinding wheel testing etc. The ...
Company: Homray Material Technology
11569. 2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
11570. 4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
11571. 2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped [Nov 05, 2024]
[Nov 05, 2024] GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
11572. 25g Red Dispensing Needle [Nov 03, 2017]
[Nov 03, 2017] Shanghai Ze Shi Electronic Technology Development Co., Ltd. Is one of the most professional dispensing needle manufacturer in China, the company has been committed to dispensing equipment and supplies, all kinds of ...
Company: Shanghai Zeshi Electron Technology Development Co., Ltd.
11573. 18g Dispensing Tips [Nov 03, 2017]
[Nov 03, 2017] Shanghai Ze Shi Electronic Technology Development Co., Ltd. Is one of the most professional dispensing needle manufacturer in China, the company has been committed to dispensing equipment and supplies, all kinds of ...
Company: Shanghai Zeshi Electron Technology Development Co., Ltd.
11574. 150mm RF GaN Si Hemt Epi-Wafers Manufacturers and Supplier [Aug 22, 2025]
[Aug 22, 2025] 150mm RF GaN Si HEMT epi-wafers manufacturers and supplier Homray Material Technology manufacture 150mm 6inch RF GaN on Si HEMT epi wafers, we also supply D-MODE and E-MODE structures GaN epi wafers. HMT technology ...
Company: Homray Material Technology
11575. GaN Epi Grown on Sapphire Wafer Manufacture and Supplier [Aug 22, 2025]
[Aug 22, 2025] GaN Epi grown on Sapphire wafer manufactuer and supplier Homray Material Technology produces and supplies GaN-on-Sapphire epi wafer with 4 inch and 6 inch for power device.The products have extremely high electron ...
Company: Homray Material Technology
11576. 8 Inch GaN Epi Wafer Manufacturer for LV Breakdown Voltage<200V [Aug 22, 2025]
[Aug 22, 2025] 8 inch GaN Epi Wafer Manufacturer for LV Breakdown voltage<200V As the GaN Epi Wafer manufacturer and supplier, HMT can provide GaN on Si Epi Wafer with breakdown voltage <200V, epi thickness <2.2um. Meanwhile, we ...
Company: Homray Material Technology
11577. 6 Inch Sic Wafer Without Polishing Manufacturer 600um Thickness [Aug 22, 2025]
[Aug 22, 2025] 6 inch SiC Wafer without polishing Manufacturer 600um thickness As the leading manufacturer of SiC Substrate, HMT company also offer high quanlity Raw-cut SiC Wafer both for 6 inch and 4 inch. Our Un-grinding SiC ...
Company: Homray Material Technology
11578. GaN-on-Sic Epitaxial Structures Wafer Manufacturer with 4 or 6 Inch Diameter [Aug 22, 2025]
[Aug 22, 2025] GaN-on-SiC epitaxial structures wafer manufacturer with 4 or 6 inch diameter GaN-on-SiC Epi wafer supplier and manufacturer HMT offer 4 inch and 6 inch AlGaN/GaN-on-SiC epi wafer with competitive price at the market. ...
Company: Homray Material Technology
11579. 6 Inch Sic Boule Manufacturer 4h-N Sic Ingot Supplier [Aug 22, 2025]
[Aug 22, 2025] 6 inch SiC Boule Manufacturer 4H-N SiC Ingot Supplier HMT offer guaranteed 6 inch SiC Boule for cold split and multi-wire saw machine testing. The mainstream is 6 inch SiC Boule in the market. We both supply conductive ...
Company: Homray Material Technology
11580. 4 Inch GaN Substrate Wafer Manufacturer N Type Si Doped [Aug 22, 2025]
[Aug 22, 2025] 4 inch GaN Substrate Wafer Manufacturer single side polished As the leading GaN wafer manufacturer in China,HMT company offer 4 inch sapphire substrate GaN wafers both for un-doped N type and SI type. GaN layer ...
Company: Homray Material Technology
