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Sic Boule Manufacturer for Cold Split and Wire Saw Testing

11536.

Sic Boule Manufacturer for Cold Split and Wire Saw Testing Open Details in New Window [Aug 22, 2025]

SiC Boule Manufacturer for cold split and wire saw testing Homray Material Technology offer 6 inch SiC boule for cold split and wisre saw testing for domestic and foreign customers with very competitive price. Our ...

Company: Homray Material Technology

GaN-on-Si for RF Hemt Manufacturer and Supplier Price

11537.

GaN-on-Si for RF Hemt Manufacturer and Supplier Price Open Details in New Window [Aug 22, 2025]

GaN-on-Si for RF HEMT Manufacturer and supplier price Homray Material Technology produces and supplies GaN-on-Silicon epi wafer with 4 inch,6 inch and 8 inch for power device.The products have extremely high ...

Company: Homray Material Technology

100mm GaN on Sapphire Manufacturer GaN Epi Layer

11538.

100mm GaN on Sapphire Manufacturer GaN Epi Layer Open Details in New Window [Aug 22, 2025]

100mm GaN on Sapphire Manufacturer GaN Epi Layer HMT produces and supplies high-quality 100mm GaN on sapphire wafer for customers worldwide. 2inch and 4 inch free standing GaN wafer also available in HMT. A reliable ...

Company: Homray Material Technology

Dummy Sic Ingots Manufacturer for Laser Machine Testing

11539.

Dummy Sic Ingots Manufacturer for Laser Machine Testing Open Details in New Window [Aug 22, 2025]

Dummy SiC ingots manufacturer for laser machine testing A reliable SiC ingot and As cut SiC wafer manufacturer and supplier you can trust in China! We offer both SiC ingots,SiC as cut wafer and SiC substrate wafer ...

Company: Homray Material Technology

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)

11540.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

Disc Type Fast Switching Thyristors, Inverter Thyristor, Kk SCR Thyristor

11541.

Disc Type Fast Switching Thyristors, Inverter Thyristor, Kk SCR Thyristor Open Details in New Window [Aug 23, 2024]

***Our main business*** 1)thyristor and diode chips 2)thyristor: Phase control thyristor(kp), fast switching thyristor(kk), Bi-directional Triode Thyristor(TRIAC). 3)diode: Rectifier diode(zp), fast recovery ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

Injection Molding Dispensing Flexible Tips 18g 1.5inch

11542.

Injection Molding Dispensing Flexible Tips 18g 1.5inch Open Details in New Window [Aug 21, 2024]

We are specialized in producing dispensing supplies, is a professional OEM manufacturers. OEM business now serves the world famous enterprises. Our production technology has reached industry-leading technology. ...

Company: Shanghai Zeshi Electron Technology Development Co., Ltd.

20g 1.5inch Long Injection Molding Dispensing Flexible Tips

11543.

20g 1.5inch Long Injection Molding Dispensing Flexible Tips Open Details in New Window [Aug 21, 2024]

We are specialized in producing dispensing supplies, is a professional OEM manufacturers. OEM business now serves the world famous enterprises. Our production technology has reached industry-leading technology. ...

Company: Shanghai Zeshi Electron Technology Development Co., Ltd.

20g 0.5inch Long Injection Molding Dispensing Flexible Tips

11544.

20g 0.5inch Long Injection Molding Dispensing Flexible Tips Open Details in New Window [Aug 21, 2024]

We are specialized in producing dispensing supplies, is a professional OEM manufacturers. OEM business now serves the world famous enterprises. Our production technology has reached industry-leading technology. ...

Company: Shanghai Zeshi Electron Technology Development Co., Ltd.

Hall-Effect Linar Integrated Circuits (OH49E)

11545.

Hall-Effect Linar Integrated Circuits (OH49E) Open Details in New Window [Aug 20, 2024]

OH49E Series LINEAR HALL-EFFECT IC Order information Type OH49E-S Operating Temperature -20~100 degree Package SOT23 3000PCS/reel Type OH49E -20~100degree Package TO-92S 1000PCS/bag General Description The ...

Company: Nanjing Ouzhuo Technology Co., Ltd.

Un-Polished Raw Sic Wafer Manufacturer Without Lapping

11546.

Un-Polished Raw Sic Wafer Manufacturer Without Lapping Open Details in New Window [Aug 22, 2025]

Un-polished raw SiC wafer manufacturer without lapping We can supply raw SiC wafer without lapping and polishing process. Come and have a look at HMT un-polished SiC wafer for machine testing only. Both 4 inch and 6 ...

Company: Homray Material Technology

50.8mm Raw Cut Sic Wafer Manufacturer 2 Inch 1200um Thickness

11547.

50.8mm Raw Cut Sic Wafer Manufacturer 2 Inch 1200um Thickness Open Details in New Window [Aug 22, 2025]

50.8mm Raw Cut SiC Wafer Manufacturer 2 inch 1200um Thickness HMT offer guaranteed without lapping raw cut 2 inch SiC wafer for lapping machine testing,abrasive testing, diamond grinding wheel testing etc. The ...

Company: Homray Material Technology

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ...

11548.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate

11549.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped

11550.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped Open Details in New Window [Nov 05, 2024]

GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.