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MB10s 1A 1000V Mbs Package Glass Passivated Bridge Rectifier

48631.

MB10s 1A 1000V Mbs Package Glass Passivated Bridge Rectifier Open Details in New Window [Jun 04, 2023]

Symbols MB2S MB4S MB6S MB8S MB10S Units Maximum repetitive peak reverse voltage VRMM 200 400 600 800 1000 Volts Maximum RMS voltage V RMS 140 280 420 560 700 Volts Maximum DC blocking ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

2cl70 Zg Fast-Recovery Rectifier Diodes High Voltage Rectifier

48632.

2cl70 Zg Fast-Recovery Rectifier Diodes High Voltage Rectifier Open Details in New Window [May 19, 2023]

Plastic Fast Recover High Voltage Rectifier Reverse Voltage 12KV Forward Current 350mA ltem Symbols 2CL70 Unit Repetitive Peak Reverse Voltage VRRM 6 KV Average Forward Current IF(AV) 5 (50HZ,Ta ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A

48633.

Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A Open Details in New Window [Sep 28, 2022]

Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A General Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...

Company: Wuxi Goford Semiconductor Co., Ltd.

N Channel Mosfet Ao3402 Replacement 3400 30V 5.8A Sot-23

48634.

N Channel Mosfet Ao3402 Replacement 3400 30V 5.8A Sot-23 Open Details in New Window [Sep 09, 2022]

N Channel Mosfet AO3402 Replacement 3400 30V 5.8A SOT-23 General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Factory Direct Dual N Mosfet Transistor G09n06s2 60V 6A Sop-8

48635.

Factory Direct Dual N Mosfet Transistor G09n06s2 60V 6A Sop-8 Open Details in New Window [Sep 09, 2022]

Factory Direct Dual N Mosfet Transistor G09N06S2 60V 6A SOP-8 General Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Si4916dy Equivalent Transistor G16n03s 30V Sop-8 Mosfet with ISO9001 Certificate

48636.

Si4916dy Equivalent Transistor G16n03s 30V Sop-8 Mosfet with ISO9001 Certificate Open Details in New Window [Sep 09, 2022]

Si4916DY Equivalent Transistor G16N03S 30V SOP-8 Mosfet with ISO9001 Certificate General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application

48637.

Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application Open Details in New Window [Sep 09, 2022]

Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application General Description The 2312 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Factory Directly 30V 48A Dfn Package Mosfet for Pd

48638.

Factory Directly 30V 48A Dfn Package Mosfet for Pd Open Details in New Window [Aug 23, 2022]

Factory Directly 30V 48A DFN Package Mosfet for PD General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Hot Sale 30V 50A Dfn Package Mosfet with ISO9001 Certificate

48639.

Hot Sale 30V 50A Dfn Package Mosfet with ISO9001 Certificate Open Details in New Window [Aug 23, 2022]

Hot Sale 30V 50A DFN Package MOSFET with ISO9001 Certificate General Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...

Company: Wuxi Goford Semiconductor Co., Ltd.

ISO9001 Certificate Mosfet Manufacturer 30V 50A Dfn Package Mosfet

48640.

ISO9001 Certificate Mosfet Manufacturer 30V 50A Dfn Package Mosfet Open Details in New Window [Aug 23, 2022]

ISO9001 Certificate MOSFET Manufacturer 30V 50A DFN Package MOSFET General Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Electric Components Medium Power Field Effect Mosfet Package Sop-8

48641.

Electric Components Medium Power Field Effect Mosfet Package Sop-8 Open Details in New Window [Aug 19, 2022]

Electric Components Medium Power Field Effect Mosfet Package SOP-8 Part Number G08N06S VDSS 60V ID 6A RDS 24 mΩ @ vgs=10V Vth 1.7V Package SOP-8 Ciss 979 pF Crss 100 pF Datasheet You may ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet

48642.

Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet Open Details in New Window [Jun 23, 2022]

Original factory directly N Channel 60V 6A sot-23-3l Package mosfet General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Free Sample 30V 8A Dfn Package Mosfet for Electronic Cigarette

48643.

Free Sample 30V 8A Dfn Package Mosfet for Electronic Cigarette Open Details in New Window [Jun 23, 2022]

Free Sample 30V 8A DFN Package MOSFET for Electronic Cigarette General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Goford 3401 Mosfet 30V Sot-23 P Channel Mosfet for Mobile Charger

48644.

Goford 3401 Mosfet 30V Sot-23 P Channel Mosfet for Mobile Charger Open Details in New Window [Jun 23, 2022]

GOFORD 3401 MOSFET 30V SOT-23 P Channel MOSFET for Mobile Charger General Description The 3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...

Company: Wuxi Goford Semiconductor Co., Ltd.

G20n06j Mosfet 60V 20A to-251 Package Mosfet China Manufacturer

48645.

G20n06j Mosfet 60V 20A to-251 Package Mosfet China Manufacturer Open Details in New Window [Jun 23, 2022]

G20N06J MOSFET 60V 20A TO-251 Package MOSFET China Manufacturer General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...

Company: Wuxi Goford Semiconductor Co., Ltd.