Jiangsu Profile
Product List
48586. Murf1020CT Super Fast Recovery Silicon Rectifier High Voltage Rectifier 
[Jan 11, 2025]
[Jan 11, 2025] Product Description Symbols 6A05 6A1 6A2 6A4 6A6 6A8 6A10 Units Maximum repetitive peak reverse VRMM 50 100 200 400 600 800 1000 Volts VRMS 35 70 140 280 420 560 700 Volts Maximum ...
48587. G05np10s Mosfet 100V 5A Sop-8 N+P Mosfet [Nov 14, 2023]
[Nov 14, 2023] G05NP10S MOSFET 100V 5A SOP-8 N+P MOSFET General Description The G05NP10S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48588. New Product Fast Switching N-Channel Mosfet of Sop-8 Package 60V Parameter [Nov 14, 2023]
[Nov 14, 2023] New Product Fast Switching N-Channel Mosfet of SOP-8 Package 60V Parameter General Description The G10N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48589. Ao6294 Alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application [Nov 13, 2023]
[Nov 13, 2023] AO6294 alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48590. Ipd09n03la Substitute Mosfet 30V 50A N-Channel [Nov 13, 2023]
[Nov 13, 2023] IPD09N03LA Substitute Mosfet 30V 50A N-Channel General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48591. Gt12n06s Mosfet 60V 12A Sop-8 Mosfet for Fast Charger [Nov 13, 2023]
[Nov 13, 2023] GT12N06S MOSFET 60V 12A SOP-8 MOSFET for Fast Charger General Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48592. MB10s 1A 1000V Mbs Package Glass Passivated Bridge Rectifier [Jun 04, 2023]
[Jun 04, 2023] Symbols MB2S MB4S MB6S MB8S MB10S Units Maximum repetitive peak reverse voltage VRMM 200 400 600 800 1000 Volts Maximum RMS voltage V RMS 140 280 420 560 700 Volts Maximum DC blocking ...
48593. 2cl70 Zg Fast-Recovery Rectifier Diodes High Voltage Rectifier [May 19, 2023]
[May 19, 2023] Plastic Fast Recover High Voltage Rectifier Reverse Voltage 12KV Forward Current 350mA ltem Symbols 2CL70 Unit Repetitive Peak Reverse Voltage VRRM 6 KV Average Forward Current IF(AV) 5 (50HZ,Ta ...
48594. Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A [Sep 28, 2022]
[Sep 28, 2022] Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A General Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48595. N Channel Mosfet Ao3402 Replacement 3400 30V 5.8A Sot-23 [Sep 09, 2022]
[Sep 09, 2022] N Channel Mosfet AO3402 Replacement 3400 30V 5.8A SOT-23 General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48596. Factory Direct Dual N Mosfet Transistor G09n06s2 60V 6A Sop-8 [Sep 09, 2022]
[Sep 09, 2022] Factory Direct Dual N Mosfet Transistor G09N06S2 60V 6A SOP-8 General Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48597. Si4916dy Equivalent Transistor G16n03s 30V Sop-8 Mosfet with ISO9001 Certificate [Sep 09, 2022]
[Sep 09, 2022] Si4916DY Equivalent Transistor G16N03S 30V SOP-8 Mosfet with ISO9001 Certificate General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48598. Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application [Sep 09, 2022]
[Sep 09, 2022] Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application General Description The 2312 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48599. Factory Directly 30V 48A Dfn Package Mosfet for Pd [Aug 23, 2022]
[Aug 23, 2022] Factory Directly 30V 48A DFN Package Mosfet for PD General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
48600. Hot Sale 30V 50A Dfn Package Mosfet with ISO9001 Certificate [Aug 23, 2022]
[Aug 23, 2022] Hot Sale 30V 50A DFN Package MOSFET with ISO9001 Certificate General Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
