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4 Inch Sic Wafer Substrate 4h-N Type

31472.

4 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

4 Inch GaN on Silicon Epitaxial Wafer

31473.

4 Inch GaN on Silicon Epitaxial Wafer Open Details in New Window [Nov 05, 2024]

GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)

31474.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ...

31475.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate

31476.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped

31477.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped Open Details in New Window [Nov 05, 2024]

GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

6 Inch Sapphire Substrate

31478.

6 Inch Sapphire Substrate Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

Daybright All-in-One Ess

31479.

Daybright All-in-One Ess Open Details in New Window [Aug 23, 2024]

Daybright ALL-IN-ONE ESS integrates energy storage system modules to support off-grid/grid-connected use and cloud monitoring.With the first-class LFP core and self-developed intelligent BMS battery management system, ...

Company: Lkk Cultural Development Nanjing Co., Ltd

Dg2-VCR Ultra-High Purity Pressure Transmitter for Semiconductor Manufacturing, Ultra-High Purity ...
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31480.

Dg2-VCR Ultra-High Purity Pressure Transmitter for Semiconductor Manufacturing, Ultra-High Purity ... Open Details in New Window [Jan 15, 2025]

Audited Supplier

Product Parameters Model No. DG2-VCR Output Signal Type Direct current Production Process Micro Fusion Material 17-4PH/316L(VIM+VAM)/Hastelloy Thread Type 1/4VCR, Customized Wiring Type 1, Direct outlet 2, ...

Company: Shenzhen Maxonic Automation Control Co., Ltd Senex Branch

High Strength Aluminum Alloy CNC Machining Parts for Aerospace Semiconductor / Electronic ...
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31481.

High Strength Aluminum Alloy CNC Machining Parts for Aerospace Semiconductor / Electronic ... Open Details in New Window [Feb 01, 2026]

Audited Supplier

Material Aluminum: 2000 series, 6000 series, 7075, 5052, etc. Stainlesss steel: SUS303, SUS304, SS316, SS316L, 17-4PH,etc. Steel:1214L/1215/1045/4140/SCM440/40CrMo, etc. Brass: 260, C360, H59, H60, H62, H63, H65, H68, ...

Company: KOBO Advanced Materials Co., Ltd.

Magnetic Absolute Linear Encoder with 10nm Resolution Apply for Semiconductor
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31482.

Magnetic Absolute Linear Encoder with 10nm Resolution Apply for Semiconductor Open Details in New Window [Mar 09, 2026]

Product Features LAU Series High measurement accuracy: Accuracy is ±2.5 μm/±5 μm with absolute positioning ability. Good protection effect: Aluminum alloy housing shields scale from cutting fluid, debris, and dust. Easy ...

Company: Nanjing Qitu Intelligent Equipment Co., Ltd.

Semiconductor Clean-Room Power Delivery High Current Compact Busway 5000A/6300A
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31483.

Semiconductor Clean-Room Power Delivery High Current Compact Busway 5000A/6300A Open Details in New Window [Nov 28, 2025]

Busway Main uses Busbar trunking is widely used in applications requiring reliable, efficient, and flexible power distribution of large capacities: 1. High-rise buildings and commercial complexes: Serving as the main ...

Company: Nanjing Infinite Power Technology Co., Ltd.

Epoxy Insulated Bimetal Aluminum Plug-in Busway 1000A for Semiconductor Clean-Room Power Delivery ...
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31484.

Epoxy Insulated Bimetal Aluminum Plug-in Busway 1000A for Semiconductor Clean-Room Power Delivery ... Open Details in New Window [Nov 28, 2025]

Busway Main uses Busbar trunking is widely used in applications requiring reliable, efficient, and flexible power distribution of large capacities: 1. High-rise buildings and commercial complexes: Serving as the main ...

Company: Nanjing Infinite Power Technology Co., Ltd.

As1793mry to-92s Electronic Components / Integrated Circuits /MOS/ Original Genuine

31485.

As1793mry to-92s Electronic Components / Integrated Circuits /MOS/ Original Genuine Open Details in New Window [Aug 22, 2024]

Shop Notices Shopping guidelines 1, Due to the particularity of electronic components, product price or stock will change, please ...

Company: Nanjing Ruijinghong Microelectronics Co., LTD