Jiangsu Profile
Product List
31411. 80N03D 80A 30V N-channel enhancement mode power MOSFET 
[Dec 27, 2025]
[Dec 27, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer exclusively focused on diodes, bridge rectifiers, automotive rectifier diodes, thyristors, and MOSFETs. We could supply competitive price and fast ...
31412. 100N03D 100A 30V N-channel enhancement mode power MOSFET [Dec 27, 2025]
[Dec 27, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer exclusively focused on diodes, bridge rectifiers, automotive rectifier diodes, thyristors, and MOSFETs. We could supply competitive price and fast ...
31413. Electrical Component 5n20A Mosfet 200V 5A to-252 Packaging [Aug 19, 2022]
[Aug 19, 2022] Product Description 5N20A 200V 5A TO-252 packaging Mosfet (electronic components distributor) Part Number 5N20A VDSS 200V ID 5A RDS 0.49-0.58Ω @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31414. dB101s dB104s dB107s Bridge Rectifier 1A 50V~1000V Transistor [Jun 28, 2021]
[Jun 28, 2021] Specifications 1A Glass Passivated Bridge Rectifiers DB101(S)-DB107(S) Features: 1)We are professional diode manufacturer 2)High Quality,Competitive Price 3)Flexible business mode Product ...
31415. 200V 0.8A MB2m Bridge Rectifiers [Apr 19, 2021]
[Apr 19, 2021] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with ...
31416. 6 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31417. 8 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31418. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ... [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31419. 4 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31420. 4 Inch GaN on Silicon Epitaxial Wafer [Nov 05, 2024]
[Nov 05, 2024] GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
31421. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
31422. 2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
31423. 4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
31424. 2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped [Nov 05, 2024]
[Nov 05, 2024] GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
31425. 6 Inch Sapphire Substrate [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
