Jiangsu Profile
Product List
22321. Bav199 5-Inch Fast Switching Diode Chips/Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 0.28mm×0.28mm IF 160mA VR 75V VF/VF1 0.9/1.25V IR 5μA CT 2pF trr 3000ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
22322. 1504 4-Inch Fast Switching Diode Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.3mm×0.3mm IF 300mA VR 220V VF/VF1 1.48/0.8V IR/IR1 0.02μA/10nA CT 4pF Wafer Size 4 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22323. 5401 5-Inch Small-Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.44mm×0.44mm BVCEO -150V BVCBO -160V BVEBO -5V IC -0.6A hFE 100~300 VCE(sat) -0.5V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22324. 772m 5-Inch Medium-Power Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.08mm×1.08mm BVCEO -30V BVCBO -50V BVEBO -7V IC -3A hFE 100~400 VCE(sat) -0.5V fT 50MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22325. D965 5-Inch Medium Power Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.08mm×1.08mm BVCEO 20V BVCBO 40V BVEBO 7V IC 5A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22326. D965s 5-Inch Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.89mm×0.89mm BVCEO 20V BVCBO 40V BVEBO 7V IC 4A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22327. 2222A 5-Inch Fast Switching Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.46mm×0.46mm BVCEO 40V BVCBO 75V BVEBO 6V IC 0.6A hFE 100~300 VCE(sat) 1V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22328. Bc807 5-Inch High Frequency Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.53mm×0.53mm BVCEO -500V BVCBO -45V BVEBO -6V IC -0.5A hFE 125~600 VCE(sat) -0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22329. Jcr0125b 4-Inch SCR Thyristor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.25mm×1.25mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 1.5A ITSM 15A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22330. Jcr0110b 4-Inch SCR Thyristor Chip/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.10mm×1.10mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 1A ITSM 10A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22331. Jcr0092b 4-Inch SCR Thyristor Chip/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.92mm×0.92mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 0.8A ITSM 8A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22332. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1620μ m×1620μ m Known Good Dies 2800 P(W) 35 I(A) 3.2 BCEO/BCEO/BEBO(V) 220/350/7 hFE 10-40 fT(MHz) 5 Metallization Front: Al Back: Ag Yangzhou Genesis Microelectronics Co., ...
22333. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
22334. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
22335. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
