Jiangsu Profile
Product List
22246. S24n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer 
[Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 40V VF1 0.6V IR 500μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22247. S24n20aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 20V VF1 0.47V IR 200μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22248. S68h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.73mm×1.73mm IF 5A VR 60V IR 3μA VF 0.71V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22249. S26n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 60V IR 25μA VF 0.63V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22250. S35n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.89mm×0.89mm IF 2A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22251. S32h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 100V IR 5μA VF 0.85V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22252. S32n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 60V IR 100μA VF 0.62V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22253. S32n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 40V IR 100μA VF 0.52V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22254. S28n40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22255. S26n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.66mm×0.66mm IF 1A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22256. Tipp117 Darlington Transistors Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.50mm×1.50mm BVCEO -100V BVCBO -100V BVEBO -6V IC -2A hFE 2000~15000 VCE(sat) -1.8V fT 10MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22257. Tip112 Darlington Transistors Chips/Silicon Wafe [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.80mm×1.80mm BVCEO 100V BVCBO 150V BVEBO 6V IC 4A hFE 2000~15000 VCE(sat) 2V fT 10MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22258. Tip122 4-Inch Darlington Transistors Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2.14mm×2.14mm BVCEO 100V BVCBO 150V BVEBO 6V IC 5A hFE 2000~15000 VCE(sat) 2V fT 10MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22259. Tip127 4-Inch Darlington Transistors Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2.14mm×2.14mm BVCEO -100V BVCBO -100V BVEBO -6V IC -5A hFE 2000~15000 VCE(sat) -2V fT 10MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22260. Tip132 4-Inch Darlington Transistors Chips/ Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2.8mm×2.8mm BVCEO 100V BVCBO 150V BVEBO 6V IC 8A hFE 2000~15000 VCE(sat) 2V fT 10MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
