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150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
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17716.

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
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17717.

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b
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17718.

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b
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17719.

50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b
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17720.

90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b
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17721.

90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package
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17722.

150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6
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17723.

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6
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17724.

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

NPN Epitaxial Silicon Transistor Bu406 to-220c
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17725.

NPN Epitaxial Silicon Transistor Bu406 to-220c Open Details in New Window [Jun 23, 2025]

Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V 50A N-Mosfet Dsd190n10L3
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17726.

100V 50A N-Mosfet Dsd190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V 50A N-Mosfet Dsb190n10L3
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17727.

100V 50A N-Mosfet Dsb190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/4.5mΩ /40A N-Mosfet Dsr070n04la
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17728.

40V/4.5mΩ /40A N-Mosfet Dsr070n04la Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a
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17729.

85V/0.9mΩ /360A N-Mosfet Dsu011n08n3a Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r
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17730.

54A 30V N-Channel Enhancement Mode Power Mosfet Dh060n03r Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 54 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd