Jiangsu Profile
Product List
17701. SCR Thyristor Semiconductor Module Standard Mounting for Versatile Electrical Applications 
[Jan 04, 2026]
[Jan 04, 2026] Product Description Factory Direct Pricing: At Zhenjiang Zhendi Electric Technology Co., Ltd, we pride ourselves on offering factory-direct pricing. As a direct manufacturer, we eliminate the middleman, allowing us to ...
17702. IGBT Thyristor Module Standard Recovery SCR Semiconductor Module for Reliable Power Control [Dec 02, 2025]
[Dec 02, 2025] Product Description High-Power Capability: Discover the zhendi MFC100A SCR Thyristor Module, a powerhouse boasting an extraordinary current rating of up to 800A in on-state (IT (RMS) and IT (AV)). This robust feature ...
17703. High Performance Thyristor Mtc30-160 SCR Module for Industrial Applications [Dec 02, 2025]
[Dec 02, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
17704. Uts630-1250A Inverter Converter Three Phase Full Control Bridge Customizable Dual Single & AC/DC ... [Jul 31, 2025]
[Jul 31, 2025] Product Description Product name UTS630-1250A Three Phase Full Control Bridge Welding Diode Assembly Color Silver Usage Welding machine Service 24 hours service Don't hesitate to click here and share your ...
17705. IGBT Module SCR Power Thyristor Diode Modules (SKKT162/18E) [Feb 28, 2025]
[Feb 28, 2025] Standard SCR Power Modules, SKK Series Item# SKKT162/18E - POWER MODULE 160A 1800V DUAL-SCR SKK Series Information Seven Standard SCR and Diode Circuits Blocking Voltages to 1800 Volts 1000 v/us dv/dt ...
Company: Nanjing Yumany Imp & Exp Co., Ltd.
17706. High Quality SCR Thyristor for Power Control Fast Delivery Energy Saving for Phase Control ... [Jan 04, 2026]
[Jan 04, 2026] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
17707. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
17708. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
17709. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
17710. 4/6/8/12 Inch Silicon Wafer for Mosfet Chips [Jan 03, 2026]
[Jan 03, 2026] Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...
Company: Wuxi Kingful Corporation., Ltd
17711. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
17712. 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
17713. 150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
17714. 100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
17715. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Nov 08, 2025]
[Nov 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
