Jiangsu Profile
Product List
6556. Uucap High Stability DC Power Aluminum Electrolytic Capacitor 450V2200UF 3300UF 3900UF 4700UF 
[Feb 28, 2026]
[Feb 28, 2026] Product Description Specification Company Profile Certifications Exhibition Product packaging FAQ 1. What are the advantages of your aluminum electrolytic capacitors? Our aluminum electrolytic capacitors ...
Company: Suzhou UUCAP Manufacturing Co., Ltd.
6557. 100% New Oriqinal Power Inverter Aluminum Electrolytic Capacitor 450V390UF470UF680UF820UF [Feb 27, 2026]
[Feb 27, 2026] Product Description Specification Company Profile Certifications Exhibition Product packaging FAQ 1. What are the advantages of your aluminum electrolytic capacitors? Our aluminum electrolytic capacitors ...
Company: Suzhou UUCAP Manufacturing Co., Ltd.
6558. 115A 1200V N-Channel SiC Power MOSFET DHC2M016120Q TO-247 [Aug 09, 2026]
[Aug 09, 2026] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
6559. 75A 1200V IGBT Module DGC75C120M2T ECONOPIM2 [Aug 09, 2026]
[Aug 09, 2026] 75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
6560. 65A 1200V N-Channel SiC Power MOSFET DHC1M025120D TO-3P [Aug 09, 2026]
[Aug 09, 2026] 65A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
6561. 60A 1200V N-Channel SiC Power MOSFET DHC1M040120D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] 60A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
6562. 75A 1700V IGBT MODULE DGA75H170M2T 34MM [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6563. 50A 1200V Half Bridge IGBT Module G50N120D 34MM [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6564. 36A 1200V N-Channel SiC Power MOSFET DHC1M080120W TO-247 [Aug 09, 2026]
[Aug 09, 2026] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
6565. 1200V N-Channel SiC Power MOSFET DCCF030M120G2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6566. 5A 1700V N-Channel SiC Power MOSFET DCCF1K0M170G1 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6567. 18A 1200V N-Channel SiC Power MOSFET DCC160M120G1 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6568. 650V N-Channel SiC Power MOSFET 40M TO-247 [Aug 09, 2026]
[Aug 09, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6569. 75A 1200V Half Bridge IGBT Module DGA75H120M2T 34MM [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6570. 60A 300V Fast Recovery Diode MUR6030NCA TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
