Jiangsu Profile

Product List
6751. 34mm 50A 1200V Half Bridge IGBT Module
[Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6752. 100A 1200V Half Bridge IGBT Module
[Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6753. 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn
[Jun 23, 2025]

60A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
6754. New Energy Automobile Capacitor for EV Hev
[Jul 31, 2024]

FAQ Q1. Can I have a sample order for film capacitor?A: Yes, we welcome sample order to test and check quality. Mixed samples are acceptable. Q2. What about the lead time?A:Sample needs 3-5 days, mass production time ...
6755. 1200VDC Metallized DC Link Capacitor
[Jul 31, 2024]

FAQ Q1. Can I have a sample order for film capacitor?A: Yes, we welcome sample order to test and check quality. Mixed samples are acceptable. Q2. What about the lead time?A:Sample needs 3-5 days, mass production time ...
6756. High Power Capacitor AC Filter for Traction Inverter
[Jul 31, 2024]

FAQ Q1. Can I have a sample order for film capacitor?A: Yes, we welcome sample order to test and check quality. Mixed samples are acceptable. Q2. What about the lead time?A:Sample needs 3-5 days, mass production time ...
6757. Oil Type Snubber Capacitor with Cylindrical Aluminium Case
[Jun 30, 2025]

Application - Mainly used to limit the rising rate of excessive voltage in circuits to protect switching and protection of semiconductors in power electronics - Filtering and energy storage - The main application ...
6758. 5A 1700V N-Channel Sic Power Mosfet Dcc1K0m170g1 to-247
[Jun 23, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6759. 1700V 34mm IGBT Module Dga75h170m2t
[Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6760. 40mΩ 650V N-Channel Sic Power Mosfet Dcc040m65g2 to-247-3L
[Jun 23, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6761. 7.0A 1700V N-Channel Sic Power Mosfet Dcc650m170g1 to-247
[Jun 23, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6762. 650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L
[Jun 25, 2025]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6763. 20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L
[Jun 25, 2025]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
6764. 650V 30A N-Channel Sic Power Mosfet Dccf060m65g2 to-247-4L
[Jun 25, 2025]

30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
6765. 1700V IGBT Module Dgc75c170m2t
[Jun 25, 2025]

75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
